Infineon Technologies AG 650V 38A MOSFET Transistor IPW60R099C6

MOSFETs N-Ch 650V 38A TO247-3 CoolMOS C6 Product overview: IPW60R099C6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 38A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 38A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPW60R099C6 can be used for catalog matching and distributor lookup.

MOSFET N-Ch 600V 37.9A CoolMOS TO247

MOSFET N-Ch 600V 37.9A CoolMOS TO247

MOSFET N-Ch 600V 37.9A CoolMOS TO247

Manufacturer: Infineon Technologies
Win Source Part Number: 087413-IPW60R099C6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 278W (Tc)
Family Name: IPW60R099C6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 37.9A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 1.21mA
Max Gate Charge: 119nC @ 10V
Max Input Capacitance: 2660pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 99 mOhm @ 18.1A, 10V
Alternative Parts (Cross-Reference): TSM60NB099PW C1G; R6535ENZVC8; R6530ENZ1C9;
Introduction Date: February 09, 2010
ECCN: EAR99
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance