IPT025N15NM6 is an N-channel power MOSFET rated for 150 V drain-source voltage, with a maximum drain current of 263 A and a drain-source on-state resistance of 2.5 mΩ max at 120 A and 10 V gate-source voltage. It is packaged in a PG-HSOF-8 case measuring 10.58 mm × 10.10 mm × 11.88 mm with a thermal resistance junction-to-case of 0.38 °C/W. The device is fully qualified for industrial applications according to JEDEC and meets RoHS and IEC 61249-2-21 halogen-free requirements with MSL 1 moisture sensitivity classification. Its gate charge total is 105 nC, reverse diode recovery charge is 184 nC at 500 A/μs, and operating junction temperature ranges from -55 °C to 175 °C.
OptiMOS™ 6 power MOSFET 150 V normal level in TOLL package
IPT025N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market.
OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPT025N15NM6 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPT025N15NM6 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0025 ohms |
