Infineon Technologies AG Single FETs, MOSFETs IPU78CN10N G

N-channel MOSFET rated at 100 V drain-source voltage and 13 A continuous drain current, designed for high-frequency switching and synchronous rectification. Packaged in PG-TO251-3 with an operating temperature range of -55 to 175 °C, thermal resistance junction-to-ambient of 50 K/W on a 6 cm² PCB copper area, and RDS(on) up to 78 mΩ at 10 V gate voltage and 13 A current. RoHS compliant and qualified to JEDEC standards. Maximum gate-source voltage is ±20 V, with single-pulse avalanche energy of 17 mJ.