Infineon Technologies AG Automotive MOSFET IPW65R048CFDA

Description
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode. Summary of Features First 650V automotive qualified technology with integrated fast body diode on the market Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt Low gate charge value Q g Low Q rr at repetitive commutation on body diode & low Q oss Reduced turn on and turn of delay times Compliant to AEC Q101 standard Benefits Increased safety margin due to higher breakdown voltage Reduced EMI appearance and easy to design in Better light load efficiency Lower switching losses Higher switching frequency and/or higher duty cycle possible High quality and reliability Potential Applications Unidirectional and bidirectional DC-DC converter Battery charger HID lighting Applications DIN rail power supplies Electric vehicle (EV) drivetrain system EV charging EV traction inverter On-board charging (OBC) for electric vehicles Designers who used this product also designed with AIGW50N65H5 | Automotive IGBT discretes BAS40-06 | Schottky Diodes BTS3405G | Classic HITFET™ 12V | automotive smart low-side switches TLE42764GV | OPTIREG™ linear voltage regulators (LDO) SPD09P06PL G | P-Channel Power MOSFET IPD25N06S2-40 | Automotive MOSFET IPD50N06S4L-08 | Automotive MOSFET SAK-TC277TC-64F200N DC | AURIX™ Family – TC27xT TLE7368-2E | OPTIREG™ PMIC BAT165 | Schottky Diodes BSS308PE | Small signal/small power MOSFET FS820R08A6P2B | Automotive IGBT and CoolSiC™ MOSFET modules BSS138N | Small signal/small power MOSFET AIGW50N65H5 | Automotive IGBT discretes BAS40-06 | Schottky Diodes BTS3405G | Classic HITFET™ 12V | automotive smart low-side switches TLE42764GV | OPTIREG™ linear voltage regulators (LDO) SPD09P06PL G | P-Channel Power MOSFET IPD25N06S2-40 | Automotive MOSFET IPD50N06S4L-08 | Automotive MOSFET SAK-TC277TC-64F200N DC | AURIX™ Family – TC27xT 1 2 3 4
Request a Quote Datasheet
Description
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode. Summary of Features First 650V automotive qualified technology with integrated fast body diode on the market Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt Low gate charge value Q g Low Q rr at repetitive commutation on body diode & low Q oss Reduced turn on and turn of delay times Compliant to AEC Q101 standard Benefits Increased safety margin due to higher breakdown voltage Reduced EMI appearance and easy to design in Better light load efficiency Lower switching losses Higher switching frequency and/or higher duty cycle possible High quality and reliability Potential Applications Unidirectional and bidirectional DC-DC converter Battery charger HID lighting Applications DIN rail power supplies Electric vehicle (EV) drivetrain system EV charging EV traction inverter On-board charging (OBC) for electric vehicles Designers who used this product also designed with AIGW50N65H5 | Automotive IGBT discretes BAS40-06 | Schottky Diodes BTS3405G | Classic HITFET™ 12V | automotive smart low-side switches TLE42764GV | OPTIREG™ linear voltage regulators (LDO) SPD09P06PL G | P-Channel Power MOSFET IPD25N06S2-40 | Automotive MOSFET IPD50N06S4L-08 | Automotive MOSFET SAK-TC277TC-64F200N DC | AURIX™ Family – TC27xT TLE7368-2E | OPTIREG™ PMIC BAT165 | Schottky Diodes BSS308PE | Small signal/small power MOSFET FS820R08A6P2B | Automotive IGBT and CoolSiC™ MOSFET modules BSS138N | Small signal/small power MOSFET AIGW50N65H5 | Automotive IGBT discretes BAS40-06 | Schottky Diodes BTS3405G | Classic HITFET™ 12V | automotive smart low-side switches TLE42764GV | OPTIREG™ linear voltage regulators (LDO) SPD09P06PL G | P-Channel Power MOSFET IPD25N06S2-40 | Automotive MOSFET IPD50N06S4L-08 | Automotive MOSFET SAK-TC277TC-64F200N DC | AURIX™ Family – TC27xT 1 2 3 4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Automotive MOSFET - IPW65R048CFDA - Infineon Technologies AG
Neubiberg, Germany
Automotive MOSFET
IPW65R048CFDA
Automotive MOSFET IPW65R048CFDA
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode. Summary of Features First 650V automotive qualified technology with integrated fast body diode on the market Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt Low gate charge value Q g Low Q rr at repetitive commutation on body diode & low Q oss Reduced turn on and turn of delay times Compliant to AEC Q101 standard Benefits Increased safety margin due to higher breakdown voltage Reduced EMI appearance and easy to design in Better light load efficiency Lower switching losses Higher switching frequency and/or higher duty cycle possible High quality and reliability Potential Applications Unidirectional and bidirectional DC-DC converter Battery charger HID lighting Applications DIN rail power supplies Electric vehicle (EV) drivetrain system EV charging EV traction inverter On-board charging (OBC) for electric vehicles Designers who used this product also designed with AIGW50N65H5 | Automotive IGBT discretes BAS40-06 | Schottky Diodes BTS3405G | Classic HITFET™ 12V | automotive smart low-side switches TLE42764GV | OPTIREG™ linear voltage regulators (LDO) SPD09P06PL G | P-Channel Power MOSFET IPD25N06S2-40 | Automotive MOSFET IPD50N06S4L-08 | Automotive MOSFET SAK-TC277TC-64F200N DC | AURIX™ Family – TC27xT TLE7368-2E | OPTIREG™ PMIC BAT165 | Schottky Diodes BSS308PE | Small signal/small power MOSFET FS820R08A6P2B | Automotive IGBT and CoolSiC™ MOSFET modules BSS138N | Small signal/small power MOSFET AIGW50N65H5 | Automotive IGBT discretes BAS40-06 | Schottky Diodes BTS3405G | Classic HITFET™ 12V | automotive smart low-side switches TLE42764GV | OPTIREG™ linear voltage regulators (LDO) SPD09P06PL G | P-Channel Power MOSFET IPD25N06S2-40 | Automotive MOSFET IPD50N06S4L-08 | Automotive MOSFET SAK-TC277TC-64F200N DC | AURIX™ Family – TC27xT 1 2 3 4

650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.


Summary of Features

  • First 650V automotive qualified technology with integrated fast body diode on the market
  • Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt
  • Low gate charge value Q g
  • Low Q rr at repetitive commutation on body diode & low Q oss
  • Reduced turn on and turn of delay times
  • Compliant to AEC Q101 standard

Benefits

  • Increased safety margin due to higher breakdown voltage
  • Reduced EMI appearance and easy to design in
  • Better light load efficiency
  • Lower switching losses
  • Higher switching frequency and/or higher duty cycle possible
  • High quality and reliability

Potential Applications

  • Unidirectional and bidirectional DC-DC converter
  • Battery charger
  • HID lighting

Applications

  • DIN rail power supplies
  • Electric vehicle (EV) drivetrain system
  • EV charging
  • EV traction inverter
  • On-board charging (OBC) for electric vehicles

Designers who used this product also designed with


  • AIGW50N65H5 |
    Automotive IGBT discretes
  • BAS40-06 |
    Schottky Diodes
  • BTS3405G |
    Classic HITFET™ 12V | automotive smart low-side switches
  • TLE42764GV |
    OPTIREG™ linear voltage regulators (LDO)
  • SPD09P06PL G |
    P-Channel Power MOSFET
  • IPD25N06S2-40 |
    Automotive MOSFET
  • IPD50N06S4L-08 |
    Automotive MOSFET
  • SAK-TC277TC-64F200N DC |
    AURIX™ Family – TC27xT
  • TLE7368-2E |
    OPTIREG™ PMIC
  • BAT165 |
    Schottky Diodes
  • BSS308PE |
    Small signal/small power MOSFET
  • FS820R08A6P2B |
    Automotive IGBT and CoolSiC™ MOSFET modules
  • BSS138N |
    Small signal/small power MOSFET
  • AIGW50N65H5 |
    Automotive IGBT discretes
  • BAS40-06 |
    Schottky Diodes
  • BTS3405G |
    Classic HITFET™ 12V | automotive smart low-side switches
  • TLE42764GV |
    OPTIREG™ linear voltage regulators (LDO)
  • SPD09P06PL G |
    P-Channel Power MOSFET
  • IPD25N06S2-40 |
    Automotive MOSFET
  • IPD50N06S4L-08 |
    Automotive MOSFET
  • SAK-TC277TC-64F200N DC |
    AURIX™ Family – TC27xT

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Supplier's Site Datasheet
Transistors IPW65R048CFDA
MOSFET N-Ch 650V 63.3A TO247-3

MOSFET N-Ch 650V 63.3A TO247-3

Supplier's Site Datasheet
Singapore
650V 63.3A MOSFET Transistor
2088-IPW65R048CFDA
650V 63.3A MOSFET Transistor 2088-IPW65R048CFDA
MOSFETs N-Ch 650V 63.3A TO247-3 Product overview: IPW65R048CFDA from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 63.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 63.3A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPW65R048CFDA can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 650V 63.3A TO247-3 Product overview: IPW65R048CFDA from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 63.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 63.3A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPW65R048CFDA can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R048CFDA - 069126-IPW65R048CFDA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R048CFDA
069126-IPW65R048CFDA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R048CFDA 069126-IPW65R048CFDA
Manufacturer: Infineon Technologies Win Source Part Number: 069126-IPW65R048CFDA Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: PG-TO247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 63.3A (Tc) Gate-Source Threshold Voltage: 4.5V @ 2.9mA Max Gate Charge: 270nC @ 10V Max Input Capacitance: 7440pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 48 mOhm @ 29.4A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 069126-IPW65R048CFDA
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: PG-TO247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 63.3A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 2.9mA
Max Gate Charge: 270nC @ 10V
Max Input Capacitance: 7440pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 48 mOhm @ 29.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 650V 63.3A TO247-3

MOSFET N-Ch 650V 63.3A TO247-3

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPW65R048CFDA IPW65R048CFDA 2088-IPW65R048CFDA 069126-IPW65R048CFDA IPW65R048CFDA
Product Name Automotive MOSFET Transistors 650V 63.3A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R048CFDA MOSFET
Polarity N-Channel; N N-Channel N-Channel; N-Channel
Transistor Technology / Material Si/SiC
VGS(off) 3.5 to 4.5 volts
rDS(on) 0.0480 ohms
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
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