650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.
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MOSFET N-Ch 650V 63.3A TO247-3
MOSFETs N-Ch 650V 63.3A TO247-3 Product overview: IPW65R048CFDA from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 63.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 63.3A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPW65R048CFDA can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 069126-IPW65R048CFDA
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: PG-TO247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 63.3A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 2.9mA
Max Gate Charge: 270nC @ 10V
Max Input Capacitance: 7440pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 48 mOhm @ 29.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
MOSFET N-Ch 650V 63.3A TO247-3
| Infineon Technologies AG | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPW65R048CFDA | IPW65R048CFDA | 2088-IPW65R048CFDA | 069126-IPW65R048CFDA | IPW65R048CFDA |
| Product Name | Automotive MOSFET | Transistors | 650V 63.3A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R048CFDA | MOSFET |
| Polarity | N-Channel; N | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | Si/SiC | ||||
| VGS(off) | 3.5 to 4.5 volts | ||||
| rDS(on) | 0.0480 ohms | ||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |