Infineon Technologies AG N-Channel Power MOSFET IPT012N06N

Description
Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required. Summary of Features Industry‘s lowest R DS(on) Highest current capability >480A Very low package parasitics and inductances Benefits Less paralleling and cooling required Highest system reliability System cost reduction Enabling very compact design Potential Applications Forklift Light electric vehicles (LEV) e.g. e-scooter, e-bikes or µ-car Point-of-load (POL) Telecom efuse Applications Automotive 48 V battery management system (BMS) Cordless power tools and outdoor power equipment Fuel-cell control unit (FCCU) Microinverter solutions Designers who used this product also designed with CY9BF121KPMC-G-MNE2 | FM3 CY9BFx2xK/L/M-Series Arm® Cortex®-M3 Microcontroller (MCU) Family 2ED2182S06F | Gate driver ICs CY9BF121KPMC-G-MNE2 | FM3 CY9BFx2xK/L/M-Series Arm® Cortex®-M3 Microcontroller (MCU) Family 2ED2182S06F | Gate driver ICs CY9BF121KPMC-G-MNE2 | FM3 CY9BFx2xK/L/M-Series Arm® Cortex®-M3 Microcontroller (MCU) Family 2ED2182S06F | Gate driver ICs
  • N-Channel Power MOSFET - IPT012N06N - Infineon Technologies AG
    Infineon Technologies AG
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Description
Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required. Summary of Features Industry‘s lowest R DS(on) Highest current capability >480A Very low package parasitics and inductances Benefits Less paralleling and cooling required Highest system reliability System cost reduction Enabling very compact design Potential Applications Forklift Light electric vehicles (LEV) e.g. e-scooter, e-bikes or µ-car Point-of-load (POL) Telecom efuse Applications Automotive 48 V battery management system (BMS) Cordless power tools and outdoor power equipment Fuel-cell control unit (FCCU) Microinverter solutions Designers who used this product also designed with CY9BF121KPMC-G-MNE2 | FM3 CY9BFx2xK/L/M-Series Arm® Cortex®-M3 Microcontroller (MCU) Family 2ED2182S06F | Gate driver ICs CY9BF121KPMC-G-MNE2 | FM3 CY9BFx2xK/L/M-Series Arm® Cortex®-M3 Microcontroller (MCU) Family 2ED2182S06F | Gate driver ICs CY9BF121KPMC-G-MNE2 | FM3 CY9BFx2xK/L/M-Series Arm® Cortex®-M3 Microcontroller (MCU) Family 2ED2182S06F | Gate driver ICs
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Datasheet
Datasheet Summary
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The IPT012N06N is an N-channel power MOSFET designed for high-current industrial applications, featuring a drain-source voltage rating of 60 V and a continuous drain current of 324 A at 25°C case temperature. It is packaged in a PG-HSOF-8 case with dimensions of 10.58 mm x 10.10 mm x 2.40 mm, and includes a drain tab for enhanced thermal performance. The maximum on-state resistance is 1.20 mΩ at 10 V gate-source voltage and 100 A drain current. The device is qualified according to JEDEC for industrial applications, is RoHS compliant, and meets IEC 61249-2-21 for halogen-free requirements.

Datasheet Summary
Powered by GS/AI

The IPT012N06N is an N-channel power MOSFET designed for high-current industrial applications, featuring a drain-source voltage rating of 60 V and a continuous drain current of 324 A at 25°C case temperature. It is packaged in a PG-HSOF-8 case with dimensions of 10.58 mm x 10.10 mm x 2.40 mm, and includes a drain tab for enhanced thermal performance. The maximum on-state resistance is 1.20 mΩ at 10 V gate-source voltage and 100 A drain current. The device is qualified according to JEDEC for industrial applications, is RoHS compliant, and meets IEC 61249-2-21 for halogen-free requirements.

Suppliers

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Description
Supplier Links
N-Channel Power MOSFET - IPT012N06N - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPT012N06N
N-Channel Power MOSFET IPT012N06N
Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required. Summary of Features Industry‘s lowest R DS(on) Highest current capability >480A Very low package parasitics and inductances Benefits Less paralleling and cooling required Highest system reliability System cost reduction Enabling very compact design Potential Applications Forklift Light electric vehicles (LEV) e.g. e-scooter, e-bikes or µ-car Point-of-load (POL) Telecom efuse Applications Automotive 48 V battery management system (BMS) Cordless power tools and outdoor power equipment Fuel-cell control unit (FCCU) Microinverter solutions Designers who used this product also designed with CY9BF121KPMC-G-MNE2 | FM3 CY9BFx2xK/L/M-Series Arm® Cortex®-M3 Microcontroller (MCU) Family 2ED2182S06F | Gate driver ICs CY9BF121KPMC-G-MNE2 | FM3 CY9BFx2xK/L/M-Series Arm® Cortex®-M3 Microcontroller (MCU) Family 2ED2182S06F | Gate driver ICs CY9BF121KPMC-G-MNE2 | FM3 CY9BFx2xK/L/M-Series Arm® Cortex®-M3 Microcontroller (MCU) Family 2ED2182S06F | Gate driver ICs

Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.


Summary of Features

  • Industry‘s lowest R DS(on)
  • Highest current capability >480A
  • Very low package parasitics and inductances

Benefits

  • Less paralleling and cooling required
  • Highest system reliability
  • System cost reduction
  • Enabling very compact design

Potential Applications

  • Forklift
  • Light electric vehicles (LEV) e.g. e-scooter, e-bikes or µ-car
  • Point-of-load (POL)
  • Telecom
  • efuse

Applications

  • Automotive 48 V battery management system (BMS)
  • Cordless power tools and outdoor power equipment
  • Fuel-cell control unit (FCCU)
  • Microinverter solutions

Designers who used this product also designed with


  • CY9BF121KPMC-G-MNE2 |
    FM3 CY9BFx2xK/L/M-Series Arm® Cortex®-M3 Microcontroller (MCU) Family
  • 2ED2182S06F |
    Gate driver ICs
  • CY9BF121KPMC-G-MNE2 |
    FM3 CY9BFx2xK/L/M-Series Arm® Cortex®-M3 Microcontroller (MCU) Family
  • 2ED2182S06F |
    Gate driver ICs
  • CY9BF121KPMC-G-MNE2 |
    FM3 CY9BFx2xK/L/M-Series Arm® Cortex®-M3 Microcontroller (MCU) Family
  • 2ED2182S06F |
    Gate driver ICs
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPT012N06N
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0012 ohms
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