IPT008N06NM5LF is an N-channel MOSFET designed for hot-swap and e-fuse applications, featuring a maximum drain-source voltage of 60 V and a maximum on-resistance of 0.8 mΩ at 25°C. The device is packaged in PG-HSOF-8, with dimensions of 10.28 to 10.58 mm in length and 9.70 to 10.10 mm in width. It supports a continuous drain current of 458 A and a pulsed drain current of 1816 A, with a maximum power dissipation of 237.18 W under specified thermal conditions. The MOSFET is fully qualified for industrial applications, RoHS compliant, halogen-free according to IEC61249-2-21, and 100% avalanche tested.
OptiMOS™ 5 Single N-Channel Linear FET 60V, 0.8mΩ, 450A in TOLL package
IPT008N06NM5LF is Infineon’s best-in-class OptiMOS™ 5 linear FET 60V in a TO-Leadless (TOLL) package, offering the industry’s lowest on-state resistance RDS(on) and wide safe operating area (SOA) at 25˚C. The OptiMOS™ linear FET is a revolutionary approach that solves the trade-off between on-state resistance and linear mode capability. Combined with the TOLL package, IPT008N06NM5LF is targeted for high in-rush current, harsh applications, such as hot-swap, e-fuse, and protection applications commonly found in telecom and battery management systems (BMS).
Summary of Features
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Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPT008N06NM5LF |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 8.00E-4 ohms |
| QG | 185 nC |