Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R045CP IPW60R045CP

Description
Manufacturer: Infineon Technologies Win Source Part Number: 017330-IPW60R045CP Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 431W (Tc) Family Name: IPW60R045CP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 3.5V @ 3mA Max Gate Charge: 190nC @ 10V Max Input Capacitance: 6800pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 45 mOhm @ 44A, 10V Alternative Parts (Cross-Reference): STW62N65M5; STW72N60DM2AG; STWA68N60M6; STWA70N60DM6; Introduction Date: June 19, 2006 ECCN: EAR99 Country of Origin: Austria, China, Germany, Malaysia, Philippines Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 017330-IPW60R045CP Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 431W (Tc) Family Name: IPW60R045CP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 3.5V @ 3mA Max Gate Charge: 190nC @ 10V Max Input Capacitance: 6800pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 45 mOhm @ 44A, 10V Alternative Parts (Cross-Reference): STW62N65M5; STW72N60DM2AG; STWA68N60M6; STWA70N60DM6; Introduction Date: June 19, 2006 ECCN: EAR99 Country of Origin: Austria, China, Germany, Malaysia, Philippines Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R045CP - 017330-IPW60R045CP - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R045CP
017330-IPW60R045CP
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R045CP 017330-IPW60R045CP
Manufacturer: Infineon Technologies Win Source Part Number: 017330-IPW60R045CP Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 431W (Tc) Family Name: IPW60R045CP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 3.5V @ 3mA Max Gate Charge: 190nC @ 10V Max Input Capacitance: 6800pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 45 mOhm @ 44A, 10V Alternative Parts (Cross-Reference): STW62N65M5; STW72N60DM2AG; STWA68N60M6; STWA70N60DM6; Introduction Date: June 19, 2006 ECCN: EAR99 Country of Origin: Austria, China, Germany, Malaysia, Philippines Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 017330-IPW60R045CP
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 431W (Tc)
Family Name: IPW60R045CP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 3mA
Max Gate Charge: 190nC @ 10V
Max Input Capacitance: 6800pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 45 mOhm @ 44A, 10V
Alternative Parts (Cross-Reference): STW62N65M5; STW72N60DM2AG; STWA68N60M6; STWA70N60DM6;
Introduction Date: June 19, 2006
ECCN: EAR99
Country of Origin: Austria, China, Germany, Malaysia, Philippines
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
650V 60A MOSFET Transistor
2088-IPW60R045CP
650V 60A MOSFET Transistor 2088-IPW60R045CP
MOSFETs N-Ch 650V 60A TO247-3 CoolMOS CP Product overview: IPW60R045CP from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 60A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPW60R045CP can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 650V 60A TO247-3 CoolMOS CP Product overview: IPW60R045CP from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 60A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPW60R045CP can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 650V 60A TO247-3 CoolMOS CP

MOSFET N-Ch 650V 60A TO247-3 CoolMOS CP

Buy Now Datasheet
Transistor - 36290861 - Radwell International
Willingboro, NJ, United States
Transistor
36290861
Transistor 36290861
(PRICE/EA) MOSFET, N CHANNEL, 650V, 60A, TO-247; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:60A; DRAIN SOURCE VOLTAGE VDS:650V; ON RES. FREE 2 YEAR RADWELL WARRANTY

(PRICE/EA) MOSFET, N CHANNEL, 650V, 60A, TO-247; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:60A; DRAIN SOURCE VOLTAGE VDS:650V; ON RES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 017330-IPW60R045CP 2088-IPW60R045CP IPW60R045CP 36290861
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R045CP 650V 60A MOSFET Transistor MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 650 volts
PD 431000 milliwatts 431 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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