MOSFET N-CH 600V 20.2A TO247-3 Product overview: IPW60R190E6FKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW60R190E6FKSA1
N-Channel 600V 20.2A (Tc) 151W (Tc) Through Hole PG-TO247-3-1
Manufacturer: Infineon Technologies
Win Source Part Number: 1325378-IPW60R190E6F
Category: Discrete Semiconductor Products>Transistors
Packaging: Bulk
Standard Package: 1
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Supplier Device Package: PG-TO247-3-1
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3
Fake Threat In the Open Market: 85
REACH Status: REACH Unaffected
Other Part Number: 2156-IPW60R190E6FKSA
Drive Voltage (Max Rds On, Min Rds On): 10V
Moisture Sensitivity Level (MSL): Vendor Undefined
MOSFET N-CH 600V 20.2A TO247-3
Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube
MOSFET N-CH 600V 20.2A TO247-3
MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6
MOSFET, N-CH, 600V, 20.2A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPW60R190E6FKSA1 | IPW60R190E6FKSA1-ND | 1325378-IPW60R190E6FKSA1 | IPW60R190E6FKSA1 | 376-IPW60R190E6FKSA1 | IPW60R190E6FKSA1 | IPW60R190E6FKSA1 | 13AC9097 |
| Product Name | 600V 20.2A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 20.2A, To-247-3; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| V(BR)DSS | 600 volts | 600 volts | ||||||
| PD | 151 milliwatts | 151000 milliwatts | 151000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
