Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IPW60R190E6FKSA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1325378-IPW60R190E6F KSA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Bulk Standard Package: 1 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 630µA Power Dissipation (Max): 151W (Tc) Supplier Device Package: PG-TO247-3-1 Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-247-3 Fake Threat In the Open Market: 85 REACH Status: REACH Unaffected Other Part Number: 2156-IPW60R190E6FKSA 1-448 Drive Voltage (Max Rds On, Min Rds On): 10V Moisture Sensitivity Level (MSL): Vendor Undefined
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325378-IPW60R190E6FKSA1 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IPW60R190E6FKSA1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - IPW60R190E6FKSA1 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPW60R190E6FKSA1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube - 376-IPW60R190E6FKSA1 - Utmel Electronic Limited
    Utmel Electronic Limited
  • Mosfet, N-Ch, 600V, 20.2A, To-247-3; Transistor Polarity Infineon - 13AC9097 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 1325378-IPW60R190E6F KSA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Bulk Standard Package: 1 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 630µA Power Dissipation (Max): 151W (Tc) Supplier Device Package: PG-TO247-3-1 Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-247-3 Fake Threat In the Open Market: 85 REACH Status: REACH Unaffected Other Part Number: 2156-IPW60R190E6FKSA 1-448 Drive Voltage (Max Rds On, Min Rds On): 10V Moisture Sensitivity Level (MSL): Vendor Undefined
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325378-IPW60R190E6FKSA1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1325378-IPW60R190E6FKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1325378-IPW60R190E6FKSA1
Manufacturer: Infineon Technologies Win Source Part Number: 1325378-IPW60R190E6F KSA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Bulk Standard Package: 1 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 630µA Power Dissipation (Max): 151W (Tc) Supplier Device Package: PG-TO247-3-1 Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-247-3 Fake Threat In the Open Market: 85 REACH Status: REACH Unaffected Other Part Number: 2156-IPW60R190E6FKSA 1-448 Drive Voltage (Max Rds On, Min Rds On): 10V Moisture Sensitivity Level (MSL): Vendor Undefined

Manufacturer: Infineon Technologies
Win Source Part Number: 1325378-IPW60R190E6FKSA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Bulk
Standard Package: 1
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Supplier Device Package: PG-TO247-3-1
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3
Fake Threat In the Open Market: 85
REACH Status: REACH Unaffected
Other Part Number: 2156-IPW60R190E6FKSA1-448
Drive Voltage (Max Rds On, Min Rds On): 10V
Moisture Sensitivity Level (MSL): Vendor Undefined

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
600V 20.2A MOSFET Transistor
278-IPW60R190E6FKSA1
600V 20.2A MOSFET Transistor 278-IPW60R190E6FKSA1
MOSFET N-CH 600V 20.2A TO247-3 Product overview: IPW60R190E6FKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW60R190E6FKSA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 20.2A TO247-3 Product overview: IPW60R190E6FKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW60R190E6FKSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPW60R190E6FKSA1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPW60R190E6FKSA1-ND
Single FETs, MOSFETs IPW60R190E6FKSA1-ND
N-Channel 600V 20.2A (Tc) 151W (Tc) Through Hole PG-TO247-3-1

N-Channel 600V 20.2A (Tc) 151W (Tc) Through Hole PG-TO247-3-1

Buy Now Datasheet
Single FETs, MOSFETs - IPW60R190E6FKSA1 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPW60R190E6FKSA1
Single FETs, MOSFETs IPW60R190E6FKSA1
MOSFET N-CH 600V 20.2A TO247-3

MOSFET N-CH 600V 20.2A TO247-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPW60R190E6FKSA1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPW60R190E6FKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPW60R190E6FKSA1
MOSFET N-CH 600V 20.2A TO247-3

MOSFET N-CH 600V 20.2A TO247-3

Supplier's Site
Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube - 376-IPW60R190E6FKSA1 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube
376-IPW60R190E6FKSA1
Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube 376-IPW60R190E6FKSA1
Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube

Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPW60R190E6FKSA1
MOSFET IPW60R190E6FKSA1
MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6

MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6

Buy Now Datasheet
Mosfet, N-Ch, 600V, 20.2A, To-247-3; Transistor Polarity Infineon - 13AC9097 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 20.2A, To-247-3; Transistor Polarity Infineon
13AC9097
Mosfet, N-Ch, 600V, 20.2A, To-247-3; Transistor Polarity Infineon 13AC9097
MOSFET, N-CH, 600V, 20.2A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 600V, 20.2A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1325378-IPW60R190E6FKSA1 278-IPW60R190E6FKSA1 IPW60R190E6FKSA1-ND IPW60R190E6FKSA1 IPW60R190E6FKSA1 376-IPW60R190E6FKSA1 IPW60R190E6FKSA1 13AC9097
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 600V 20.2A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube MOSFET Mosfet, N-Ch, 600V, 20.2A, To-247-3; Transistor Polarity Infineon
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
Package Type TO-247; SOT3; TO-247-3 Tube TO-247; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247
MOSFET Operating Mode Enhancement Enhancement; ENHANCEMENT MODE
V(BR)DSS 600 volts 600 volts
PD 151 milliwatts 151000 milliwatts 151000 milliwatts
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