Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R199CP IPW60R199CP

Manufacturer: Infineon Technologies Win Source Part Number: 069122-IPW60R199CP Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 139W (Tc) Family Name: IPW60R199CP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 3.5V @ 660μA Max Gate Charge: 43nC @ 10V Max Input Capacitance: 1520pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 199 mOhm @ 9.9A, 10V Alternative Parts (Cross-Reference): STW27NM60ND; R6024KNZ1C9; STW25NM60ND; R6020ENZC8; Introduction Date: August 30, 2005 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance