Infineon Technologies AG Single FETs, MOSFETs IPU105N03L G

Description
N-Channel 30V 35A (Tc) 38W (Tc) Through Hole PG-TO251-3-21
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Description
N-Channel 30V 35A (Tc) 38W (Tc) Through Hole PG-TO251-3-21
Request a Quote
Datasheet
Datasheet Summary
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N-channel MOSFET for switch-mode power supplies and DC/DC converters, rated for 30 V drain-source voltage, 35 A continuous drain current, and 38 W power dissipation at 25 °C, with a maximum on-resistance of 10.5 mΩ at 10 V gate drive. Packaged in PG-TO251-3-21, it features avalanche capability, logic-level gate drive, and RoHS compliance. Thermal resistance junction-to-case is 3.9 K/W, and operating temperature ranges from -55 °C to 175 °C. Meets JEDEC standards and IEC climatic category 55/175/56.

Datasheet Summary
Powered by GS/AI

N-channel MOSFET for switch-mode power supplies and DC/DC converters, rated for 30 V drain-source voltage, 35 A continuous drain current, and 38 W power dissipation at 25 °C, with a maximum on-resistance of 10.5 mΩ at 10 V gate drive. Packaged in PG-TO251-3-21, it features avalanche capability, logic-level gate drive, and RoHS compliance. Thermal resistance junction-to-case is 3.9 K/W, and operating temperature ranges from -55 °C to 175 °C. Meets JEDEC standards and IEC climatic category 55/175/56.

Suppliers

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Single FETs, MOSFETs - IPU105N03LGIN-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPU105N03LGIN-ND
Single FETs, MOSFETs IPU105N03LGIN-ND
N-Channel 30V 35A (Tc) 38W (Tc) Through Hole PG-TO251-3-21

N-Channel 30V 35A (Tc) 38W (Tc) Through Hole PG-TO251-3-21

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number IPU105N03LGIN-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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