The IPT063N15N5 is an N-channel MOSFET designed for high-current power switching applications, available in a PG-HSOF-8 package measuring 10.58 mm x 10.10 mm with a height of 11.88 mm. It has a drain-source breakdown voltage of 150 V, a maximum continuous drain current of 126 A at 25°C case temperature, and a maximum on-state resistance of 6.73 mΩ at 25°C. The device supports avalanche energy up to 130 mJ and is rated for junction temperatures from -55°C to 175°C. It is fully qualified according to JEDEC for industrial applications, RoHS compliant, and halogen-free according to IEC 61249-2-21.
OptiMOS™ 5 power MOSFET 150 V 6.3 mOhm in TOLL
Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high-current applications, such as forklifts, light electric vehicles (LEV), power tools, point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design. Compared to D²PAK 7-pin, TO-Leadless shows a substantial reduction in footprint of 30 percent. The 50 percent reduced height offers a significant advantage in narrow applications such as rack or blade servers.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPT063N15N5 |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0063 ohms |
| QG | 47 nC |
