MOSFET N-CH 650V 101A TO247-3-41 Product overview: IPW60R024P7XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 101A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 101A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW60R024P7XKSA1
Win Source Part Number: 1022145-IPW60R024P7X
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ P7
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 42.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.03mA
Power Dissipation (Max): 291W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-41
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7144 pF @ 400 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 448-IPW60R024P7XKSA1
Base Product Number: IPW60R024
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 650V 101A (Tc) 291W (Tc) Through Hole PG-TO247-3-41
MOSFET N-CH 650V 101A TO247-3-41
MOSFET, N-CH, 600V, 101A, 150DEG C, 291W ROHS COMPLIANT: YES
MOSFET N-CH 650V 101A TO247-3-41
| RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2196019P | 278-IPW60R024P7XKSA1 | 1022145-IPW60R024P7XKSA1 | 448-IPW60R024P7XKSA1-ND | IPW60R024P7XKSA1 | IPW60R024P7XKSA1 | 42AH1847 | IPW60R024P7XKSA1 |
| Product Name | MOSFETs | 650V 101A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 101A, 150Deg C, 291W Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | TO-247; TO-247 | Tube | SOT3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3 | 164 nC @ 10 V | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 600 volts | 650 volts | ||||||
| PD | 291 milliwatts | 291000 milliwatts | 291000 milliwatts |
