Infineon Technologies AG N-Channel Power MOSFET IPT026N10N5

Description
OptiMOS™ 5 100V power MOSFET in TO-Leadless (TOLL) package with 60% space reduction for telecom and low voltage drives applications Infineon’s OptiMOS™ 5 100V n-channel power MOSFET IPT026N10N5 in TO-Leadless (TOLL) package is ideally suited for high switching frequencies. This package is especially designed for high current applications such as POL (point-of-load), forklift, light electric vehicles (LEV) and telecom power supply. With a 60% space reduction compared to D2PAK 7pin package, TOLL is the perfect solution where highest efficiency, outstanding EMI behavior as well as best thermal behavior and space reduction are required. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% R DS(on) reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Applications Automotive secondary power distribution unit Electric power steering (EPS) Designers who used this product also designed with BSC023N08NS5SC | N-Channel Power MOSFET 2EDF7275F | Gate driver ICs BSC023N08NS5SC | N-Channel Power MOSFET 2EDF7275F | Gate driver ICs BSC023N08NS5SC | N-Channel Power MOSFET 2EDF7275F | Gate driver ICs
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Description
OptiMOS™ 5 100V power MOSFET in TO-Leadless (TOLL) package with 60% space reduction for telecom and low voltage drives applications Infineon’s OptiMOS™ 5 100V n-channel power MOSFET IPT026N10N5 in TO-Leadless (TOLL) package is ideally suited for high switching frequencies. This package is especially designed for high current applications such as POL (point-of-load), forklift, light electric vehicles (LEV) and telecom power supply. With a 60% space reduction compared to D2PAK 7pin package, TOLL is the perfect solution where highest efficiency, outstanding EMI behavior as well as best thermal behavior and space reduction are required. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% R DS(on) reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Applications Automotive secondary power distribution unit Electric power steering (EPS) Designers who used this product also designed with BSC023N08NS5SC | N-Channel Power MOSFET 2EDF7275F | Gate driver ICs BSC023N08NS5SC | N-Channel Power MOSFET 2EDF7275F | Gate driver ICs BSC023N08NS5SC | N-Channel Power MOSFET 2EDF7275F | Gate driver ICs
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Suppliers

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N-Channel Power MOSFET - IPT026N10N5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPT026N10N5
N-Channel Power MOSFET IPT026N10N5
OptiMOS™ 5 100V power MOSFET in TO-Leadless (TOLL) package with 60% space reduction for telecom and low voltage drives applications Infineon’s OptiMOS™ 5 100V n-channel power MOSFET IPT026N10N5 in TO-Leadless (TOLL) package is ideally suited for high switching frequencies. This package is especially designed for high current applications such as POL (point-of-load), forklift, light electric vehicles (LEV) and telecom power supply. With a 60% space reduction compared to D2PAK 7pin package, TOLL is the perfect solution where highest efficiency, outstanding EMI behavior as well as best thermal behavior and space reduction are required. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% R DS(on) reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Applications Automotive secondary power distribution unit Electric power steering (EPS) Designers who used this product also designed with BSC023N08NS5SC | N-Channel Power MOSFET 2EDF7275F | Gate driver ICs BSC023N08NS5SC | N-Channel Power MOSFET 2EDF7275F | Gate driver ICs BSC023N08NS5SC | N-Channel Power MOSFET 2EDF7275F | Gate driver ICs

OptiMOS™ 5 100V power MOSFET in TO-Leadless (TOLL) package with 60% space reduction for telecom and low voltage drives applications

Infineon’s OptiMOS™ 5 100V n-channel power MOSFET IPT026N10N5 in TO-Leadless (TOLL) package is ideally suited for high switching frequencies. This package is especially designed for high current applications such as POL (point-of-load), forklift, light electric vehicles (LEV) and telecom power supply. With a 60% space reduction compared to D2PAK 7pin package, TOLL is the perfect solution where highest efficiency, outstanding EMI behavior as well as best thermal behavior and space reduction are required.


Summary of Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Output capacitance reduction of up to 44%
  • R DS(on) reduction of up to 43% from previous generation

Benefits

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

Potential Applications

  • Telecom
  • Server
  • Solar
  • Low voltage drives
  • Light electric vehicles
  • Adapter

Applications

  • Automotive secondary power distribution unit
  • Electric power steering (EPS)

Designers who used this product also designed with


  • BSC023N08NS5SC |
    N-Channel Power MOSFET
  • 2EDF7275F |
    Gate driver ICs
  • BSC023N08NS5SC |
    N-Channel Power MOSFET
  • 2EDF7275F |
    Gate driver ICs
  • BSC023N08NS5SC |
    N-Channel Power MOSFET
  • 2EDF7275F |
    Gate driver ICs
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPT026N10N5
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0026 ohms
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