OptiMOS™ 5 100V power MOSFET in TO-Leadless (TOLL) package with 60% space reduction for telecom and low voltage drives applications
Infineon’s OptiMOS™ 5 100V n-channel power MOSFET IPT026N10N5 in TO-Leadless (TOLL) package is ideally suited for high switching frequencies. This package is especially designed for high current applications such as POL (point-of-load), forklift, light electric vehicles (LEV) and telecom power supply. With a 60% space reduction compared to D2PAK 7pin package, TOLL is the perfect solution where highest efficiency, outstanding EMI behavior as well as best thermal behavior and space reduction are required.
Summary of Features
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 43% from previous generation
Benefits
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Potential Applications
Telecom
Server
Solar
Low voltage drives
Light electric vehicles
Adapter
Applications
Automotive secondary power distribution unit
Electric power steering (EPS)
Designers who used this product also designed with
BSC023N08NS5SC | N-Channel Power MOSFET
2EDF7275F | Gate driver ICs
BSC023N08NS5SC | N-Channel Power MOSFET
2EDF7275F | Gate driver ICs
BSC023N08NS5SC | N-Channel Power MOSFET
2EDF7275F | Gate driver ICs
OptiMOS™ 5 100V power MOSFET in TO-Leadless (TOLL) package with 60% space reduction for telecom and low voltage drives applications
Infineon’s OptiMOS™ 5 100V n-channel power MOSFET IPT026N10N5 in TO-Leadless (TOLL) package is ideally suited for high switching frequencies. This package is especially designed for high current applications such as POL (point-of-load), forklift, light electric vehicles (LEV) and telecom power supply. With a 60% space reduction compared to D2PAK 7pin package, TOLL is the perfect solution where highest efficiency, outstanding EMI behavior as well as best thermal behavior and space reduction are required.
Summary of Features
- Optimized for synchronous rectification
- Ideal for high switching frequency
- Output capacitance reduction of up to 44%
- R DS(on) reduction of up to 43% from previous generation
Benefits
- Highest system efficiency
- Reduced switching and conduction losses
- Less paralleling required
- Increased power density
- Low voltage overshoot
Potential Applications
- Telecom
- Server
- Solar
- Low voltage drives
- Light electric vehicles
- Adapter
Applications
- Automotive secondary power distribution unit
- Electric power steering (EPS)
Designers who used this product also designed with
- BSC023N08NS5SC |
N-Channel Power MOSFET
- 2EDF7275F |
Gate driver ICs
- BSC023N08NS5SC |
N-Channel Power MOSFET
- 2EDF7275F |
Gate driver ICs
- BSC023N08NS5SC |
N-Channel Power MOSFET
- 2EDF7275F |
Gate driver ICs