IPT026N10N5 is a 100 V N-channel power MOSFET in an HSOF-8 package, designed for high-frequency switching and synchronous rectification applications. The device has a maximum on-resistance of 2.6 mΩ, a continuous drain current of 202 A, and a total gate charge of 123 nC. It is avalanche-rated at 250 mJ and fully qualified per JEDEC for industrial applications. The thermal resistance from junction to case is 0.4 to 0.7 °C/W, and the package is RoHS compliant and halogen-free according to IEC 61249-2-21.
OptiMOS™ 5 100V power MOSFET in TO-Leadless (TOLL) package with 60% space reduction for telecom and low voltage drives applications
Infineon’s OptiMOS™ 5 100V n-channel power MOSFET IPT026N10N5 in TO-Leadless (TOLL) package is ideally suited for high switching frequencies. This package is especially designed for high current applications such as POL (point-of-load), forklift, light electric vehicles (LEV) and telecom power supply. With a 60% space reduction compared to D2PAK 7pin package, TOLL is the perfect solution where highest efficiency, outstanding EMI behavior as well as best thermal behavior and space reduction are required.
Summary of Features
Benefits
Potential Applications
Applications
Designers who used this product also designed with
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPT026N10N5 |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0026 ohms |
