N-Channel 700V 6A (Tc) 30.5W (Tc) Through Hole PG-TO251-3
Manufacturer: Infineon Technologies
Win Source Part Number: 921354-IPS70R900P7SA
Series: CoolMOS™ P7
Operating Temperature Range: -40°C ~ 150°C (TJ)
Features: N-Channel 700 V 6A (Tc) 30.5W (Tc) Through Hole PG-TO251-3
Package: TO-251-3 Short Leads, IPak, TO-251AA
Package: Tube
Mounting: Through Hole
Family Name: IPS70R900
Categories: Discrete Semiconductor Products
Case / Package: PG-TO251-3
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Quantity per package: 75
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Power Field-Effect Transistor
MOSFET N-CH 700V 6A TO251-3 Product overview: IPS70R900P7SAKMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 700V, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPS70R900P7SAKMA
MOSFET, N-CH, 700V, 6A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:700V; On Resistance Rds(on):0.74ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 700V 6A TO251-3
| DigiKey | Win Source Electronics | RS Components, Ltd. | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPS70R900P7SAKMA1-ND | 921354-IPS70R900P7SAKMA1 | 2224935 | IPS70R900P7SAKMA1 | 278-IPS70R900P7SAKMA1 | IPS70R900P7SAKMA1 | 49AC0304 | IPS70R900P7SAKMA1 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPS70R900P7SAKMA1 | MOSFETs | 700V 6A MOSFET Transistor | MOSFET | Mosfet, N-Ch, 700V, 6A, To-251; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | |||||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | SOT3; PG-TO251-3 | TO-251 | TO-251-3 | Tube | TO-3 | TO-251-3 Short Leads, IPak, TO-251AA | |
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | ||||||
| Packing Method | Tube; Tube | Tube | Tube; Tube | |||||
| MOSFET Operating Mode | Enhancement |
