Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R037C6 IPW65R037C6

Description
Manufacturer: Infineon Technologies Win Source Part Number: 069125-IPW65R037C6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500W (Tc) Family Name: IPW65R037C6 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 83.2A (Tc) Gate-Source Threshold Voltage: 3.5V @ 3.3mA Max Gate Charge: 330nC @ 10V Max Input Capacitance: 7240pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 37 mOhm @ 33.1A, 10V Alternative Parts (Cross-Reference): SCT3017ALGC11; SCT3030ALGC11; SCT3030ALHRC11; Introduction Date: October 13, 2011 ECCN: EAR99 Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 069125-IPW65R037C6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500W (Tc) Family Name: IPW65R037C6 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 83.2A (Tc) Gate-Source Threshold Voltage: 3.5V @ 3.3mA Max Gate Charge: 330nC @ 10V Max Input Capacitance: 7240pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 37 mOhm @ 33.1A, 10V Alternative Parts (Cross-Reference): SCT3017ALGC11; SCT3030ALGC11; SCT3030ALHRC11; Introduction Date: October 13, 2011 ECCN: EAR99 Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R037C6 - 069125-IPW65R037C6 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R037C6
069125-IPW65R037C6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R037C6 069125-IPW65R037C6
Manufacturer: Infineon Technologies Win Source Part Number: 069125-IPW65R037C6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500W (Tc) Family Name: IPW65R037C6 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 83.2A (Tc) Gate-Source Threshold Voltage: 3.5V @ 3.3mA Max Gate Charge: 330nC @ 10V Max Input Capacitance: 7240pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 37 mOhm @ 33.1A, 10V Alternative Parts (Cross-Reference): SCT3017ALGC11; SCT3030ALGC11; SCT3030ALHRC11; Introduction Date: October 13, 2011 ECCN: EAR99 Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 069125-IPW65R037C6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500W (Tc)
Family Name: IPW65R037C6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 83.2A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 3.3mA
Max Gate Charge: 330nC @ 10V
Max Input Capacitance: 7240pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 37 mOhm @ 33.1A, 10V
Alternative Parts (Cross-Reference): SCT3017ALGC11; SCT3030ALGC11; SCT3030ALHRC11;
Introduction Date: October 13, 2011
ECCN: EAR99
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
MOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6

MOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 069125-IPW65R037C6 IPW65R037C6
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R037C6 MOSFET
Polarity N-Channel; N-Channel
V(BR)DSS 650 volts
PD 500000 milliwatts
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