Manufacturer: Infineon Technologies
Win Source Part Number: 069125-IPW65R037C6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500W (Tc)
Family Name: IPW65R037C6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 83.2A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 3.3mA
Max Gate Charge: 330nC @ 10V
Max Input Capacitance: 7240pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 37 mOhm @ 33.1A, 10V
Alternative Parts (Cross-Reference): SCT3017ALGC11; SCT3030ALGC11; SCT3030ALHRC11;
Introduction Date: October 13, 2011
ECCN: EAR99
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
MOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6
| Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 069125-IPW65R037C6 | IPW65R037C6 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R037C6 | MOSFET |
| Polarity | N-Channel; N-Channel | |
| V(BR)DSS | 650 volts | |
| PD | 500000 milliwatts |