OptiMOS™ 5 Single N-Channel Linear FET 80V, 1.3mΩ, 330A in TOLL package
IPT013N08NM5LF is Infineon’s best-in-class OptiMOS™ 5 linear FET 80V in a TO-Leadless (TOLL) package, offering the industry’s lowest on-state resistance RDS(on) and wide safe operating area (SOA) at 25˚C. The OptiMOS™ linear FET is a revolutionary approach that solves the trade-off between on-state resistance and linear mode capability. Combined with the TOLL package, IPT013N08NM5LF is targeted for high in-rush current, harsh applications, such as hot-swap, e-fuse, and protection applications commonly found in telecom and battery management systems (BMS).
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SINGLE N-CHANNEL LINEAR FET 80V Product overview: IPT013N08NM5LF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPT013N08NM5LF can be used for catalog matching and distributor lookup.
Win Source Part Number: 1339952-IPT013N08NM5
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: OptiMOS™ 5
Package: Tape & Reel
Standard Package: 2,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Power Dissipation (Max): 3.1W (Ta) , 278W (Tc)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Supplier Device Package: PG-HSOF-8
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Base Product Number: IPT013N
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta) , 333A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V
SINGLE N-CHANNEL LINEAR FET 80V
| Infineon Technologies AG | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | IPT013N08NM5LF | 278-IPT013N08NM5LF | 1339952-IPT013N08NM5LF | IPT013N08NM5LF |
| Product Name | N-Channel Power MOSFET | N-Channel 80V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N | N-Channel | ||
| Transistor Technology / Material | Si/SiC | |||
| rDS(on) | 0.0013 ohms | |||
| QG | 158 nC |