MOSFET N-CH 600V 22A TO247
Win Source Part Number: 1378637-IPW60R099C7
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
Mfr: Infineon Technologies
Series: CoolMOS™ C7
Package: Bulk
Product Status: Active
Package / Case: TO-247-3
Supplier Device Package: PG-TO247
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Power Dissipation (Max): 110W (Tc)
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
| ODG (Origin Data Global) | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPW60R099C7 | 1378637-IPW60R099C7 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |
| V(BR)DSS | 600 volts | |
| IDSS | 22000 milliamps |