Infineon Technologies AG Single FETs, MOSFETs IPW60R099C7

Description
MOSFET N-CH 600V 22A TO247
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Description
MOSFET N-CH 600V 22A TO247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IPW60R099C7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPW60R099C7
Single FETs, MOSFETs IPW60R099C7
MOSFET N-CH 600V 22A TO247

MOSFET N-CH 600V 22A TO247

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1378637-IPW60R099C7 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1378637-IPW60R099C7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1378637-IPW60R099C7
Win Source Part Number: 1378637-IPW60R099C7 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 51 pct. MSL Level: 1 (Unlimited) Mfr: Infineon Technologies Series: CoolMOS™ C7 Package: Bulk Product Status: Active Package / Case: TO-247-3 Supplier Device Package: PG-TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 4V @ 490µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V Power Dissipation (Max): 110W (Tc) Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99

Win Source Part Number: 1378637-IPW60R099C7
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
Mfr: Infineon Technologies
Series: CoolMOS™ C7
Package: Bulk
Product Status: Active
Package / Case: TO-247-3
Supplier Device Package: PG-TO247
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Power Dissipation (Max): 110W (Tc)
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

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Technical Specifications

  ODG (Origin Data Global) Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPW60R099C7 1378637-IPW60R099C7
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts
IDSS 22000 milliamps
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