Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs IPW60R099C7

Win Source Part Number: 1378637-IPW60R099C7
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
Mfr: Infineon Technologies
Series: CoolMOS™ C7
Package: Bulk
Product Status: Active
Package / Case: TO-247-3
Supplier Device Package: PG-TO247
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Power Dissipation (Max): 110W (Tc)
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

MOSFET N-CH 600V 22A TO247

MOSFET N-CH 600V 22A TO247 Product overview: IPW60R099C7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 22A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPW60R099C7 can be used for catalog matching and distributor lookup.