Infineon Technologies AG N-Channel Power MOSFET IPT007N06N

Description
Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required. Summary of Features Industry‘s lowest R DS(on) Highest current capability >480A Very low package parasitics and inductances Benefits Less paralleling and cooling required Highest system reliability System cost reduction Enabling very compact design Potential Applications Forklift Light electric vehicles (LEV) e.g. e-scooter, e-bikes or µ-car Point-of-load (POL) Telecom efuse Applications Cordless power tools and outdoor power equipment Fuel-cell control unit (FCCU) High-voltage DC-DC converter for electric vehicles Industrial Designers who used this product also designed with 6EDL7141 | MOTIX™ | Battery Supplied BLDC Motor Controller ICs SPD30P06P G | P-Channel Power MOSFET 1EDN8550B | Gate driver ICs BSS84PW | Small signal/small power MOSFET 6EDL7141 | MOTIX™ | Battery Supplied BLDC Motor Controller ICs SPD30P06P G | P-Channel Power MOSFET 1EDN8550B | Gate driver ICs BSS84PW | Small signal/small power MOSFET 6EDL7141 | MOTIX™ | Battery Supplied BLDC Motor Controller ICs SPD30P06P G | P-Channel Power MOSFET 1EDN8550B | Gate driver ICs BSS84PW | Small signal/small power MOSFET
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Description
Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required. Summary of Features Industry‘s lowest R DS(on) Highest current capability >480A Very low package parasitics and inductances Benefits Less paralleling and cooling required Highest system reliability System cost reduction Enabling very compact design Potential Applications Forklift Light electric vehicles (LEV) e.g. e-scooter, e-bikes or µ-car Point-of-load (POL) Telecom efuse Applications Cordless power tools and outdoor power equipment Fuel-cell control unit (FCCU) High-voltage DC-DC converter for electric vehicles Industrial Designers who used this product also designed with 6EDL7141 | MOTIX™ | Battery Supplied BLDC Motor Controller ICs SPD30P06P G | P-Channel Power MOSFET 1EDN8550B | Gate driver ICs BSS84PW | Small signal/small power MOSFET 6EDL7141 | MOTIX™ | Battery Supplied BLDC Motor Controller ICs SPD30P06P G | P-Channel Power MOSFET 1EDN8550B | Gate driver ICs BSS84PW | Small signal/small power MOSFET 6EDL7141 | MOTIX™ | Battery Supplied BLDC Motor Controller ICs SPD30P06P G | P-Channel Power MOSFET 1EDN8550B | Gate driver ICs BSS84PW | Small signal/small power MOSFET
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Datasheet
Datasheet Summary
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The IPT007N06N is an N-channel power MOSFET rated for 60 V drain-source voltage and designed for high-current switching applications. It is packaged in a PG-HSOF-8 case with a maximum continuous drain current of 486 A and an on-resistance of 0.75 mΩ. The device supports single-pulse avalanche energy up to 1100 mJ and has a thermal resistance from junction to case of 0.2 to 0.4 K/W. It is RoHS compliant and halogen-free according to IEC61249-2-21, and qualified to JEDEC standards J-STD-20 and JESD-22.

Datasheet Summary
Powered by GS/AI

The IPT007N06N is an N-channel power MOSFET rated for 60 V drain-source voltage and designed for high-current switching applications. It is packaged in a PG-HSOF-8 case with a maximum continuous drain current of 486 A and an on-resistance of 0.75 mΩ. The device supports single-pulse avalanche energy up to 1100 mJ and has a thermal resistance from junction to case of 0.2 to 0.4 K/W. It is RoHS compliant and halogen-free according to IEC61249-2-21, and qualified to JEDEC standards J-STD-20 and JESD-22.

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IPT007N06N - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPT007N06N
N-Channel Power MOSFET IPT007N06N
Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required. Summary of Features Industry‘s lowest R DS(on) Highest current capability >480A Very low package parasitics and inductances Benefits Less paralleling and cooling required Highest system reliability System cost reduction Enabling very compact design Potential Applications Forklift Light electric vehicles (LEV) e.g. e-scooter, e-bikes or µ-car Point-of-load (POL) Telecom efuse Applications Cordless power tools and outdoor power equipment Fuel-cell control unit (FCCU) High-voltage DC-DC converter for electric vehicles Industrial Designers who used this product also designed with 6EDL7141 | MOTIX™ | Battery Supplied BLDC Motor Controller ICs SPD30P06P G | P-Channel Power MOSFET 1EDN8550B | Gate driver ICs BSS84PW | Small signal/small power MOSFET 6EDL7141 | MOTIX™ | Battery Supplied BLDC Motor Controller ICs SPD30P06P G | P-Channel Power MOSFET 1EDN8550B | Gate driver ICs BSS84PW | Small signal/small power MOSFET 6EDL7141 | MOTIX™ | Battery Supplied BLDC Motor Controller ICs SPD30P06P G | P-Channel Power MOSFET 1EDN8550B | Gate driver ICs BSS84PW | Small signal/small power MOSFET

Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.


Summary of Features

  • Industry‘s lowest R DS(on)
  • Highest current capability >480A
  • Very low package parasitics and inductances

Benefits

  • Less paralleling and cooling required
  • Highest system reliability
  • System cost reduction
  • Enabling very compact design

Potential Applications

  • Forklift
  • Light electric vehicles (LEV) e.g. e-scooter, e-bikes or µ-car
  • Point-of-load (POL)
  • Telecom
  • efuse

Applications

  • Cordless power tools and outdoor power equipment
  • Fuel-cell control unit (FCCU)
  • High-voltage DC-DC converter for electric vehicles
  • Industrial

Designers who used this product also designed with


  • 6EDL7141 |
    MOTIX™ | Battery Supplied BLDC Motor Controller ICs
  • SPD30P06P G |
    P-Channel Power MOSFET
  • 1EDN8550B |
    Gate driver ICs
  • BSS84PW |
    Small signal/small power MOSFET
  • 6EDL7141 |
    MOTIX™ | Battery Supplied BLDC Motor Controller ICs
  • SPD30P06P G |
    P-Channel Power MOSFET
  • 1EDN8550B |
    Gate driver ICs
  • BSS84PW |
    Small signal/small power MOSFET
  • 6EDL7141 |
    MOTIX™ | Battery Supplied BLDC Motor Controller ICs
  • SPD30P06P G |
    P-Channel Power MOSFET
  • 1EDN8550B |
    Gate driver ICs
  • BSS84PW |
    Small signal/small power MOSFET
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPT007N06N - 1186456-IPT007N06N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPT007N06N
1186456-IPT007N06N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPT007N06N 1186456-IPT007N06N
Manufacturer: Infineon Technologies Win Source Part Number: 1186456-IPT007N06N Family Name: IPT007N06N Manufacturer Homepage: www.infineon.com Alternative Parts (Cross-Reference): STO572N6F7AG; FDBL86561-F085 ; Introduction Date: May 10, 2013 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1186456-IPT007N06N
Family Name: IPT007N06N
Manufacturer Homepage: www.infineon.com
Alternative Parts (Cross-Reference): STO572N6F7AG; FDBL86561-F085 ;
Introduction Date: May 10, 2013
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited

Buy Now
Singapore, Singapore
100V MOSFET Transistor
2088-IPT007N06N
100V MOSFET Transistor 2088-IPT007N06N
MOSFETs TRENCH 40<-<100V>

MOSFETs TRENCH 40<-<100V>

Supplier's Site Datasheet
MOSFETs - 9064407P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9064407P
MOSFETs 9064407P
MOSFET N-Channel 60V 300A OptiMOS HSOF9

MOSFET N-Channel 60V 300A OptiMOS HSOF9

Supplier's Site
MOSFETs - 1787451 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1787451
MOSFETs 1787451
MOSFET N-Channel 60V 300A OptiMOS HSOF9

MOSFET N-Channel 60V 300A OptiMOS HSOF9

Supplier's Site
Sheung Wan, Hong Kong
MOSFET DIFFERENTIATED MOSFETS

MOSFET DIFFERENTIATED MOSFETS

Buy Now Datasheet
Trans MOSFET N-CH 60V 300A 9-Pin(8+Tab) HSOF - 376-IPT007N06N - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 60V 300A 9-Pin(8+Tab) HSOF
376-IPT007N06N
Trans MOSFET N-CH 60V 300A 9-Pin(8+Tab) HSOF 376-IPT007N06N
Trans MOSFET N-CH 60V 300A 9-Pin(8+Tab) HSOF

Trans MOSFET N-CH 60V 300A 9-Pin(8+Tab) HSOF

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd. VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPT007N06N 1186456-IPT007N06N 2088-IPT007N06N 9064407P 1787451 IPT007N06N 376-IPT007N06N
Product Name N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPT007N06N 100V MOSFET Transistor MOSFETs MOSFETs MOSFET Trans MOSFET N-CH 60V 300A 9-Pin(8+Tab) HSOF
Polarity N-Channel; N N-Channel N-Channel N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 7.50E-4 ohms
TJ -55 to 175 C (-67 to 347 F)
Package Type PG-HSOF-8 SOT3 Reel HSOF Hsof
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