The IPT007N06N is an N-channel power MOSFET rated for 60 V drain-source voltage and designed for high-current switching applications. It is packaged in a PG-HSOF-8 case with a maximum continuous drain current of 486 A and an on-resistance of 0.75 mΩ. The device supports single-pulse avalanche energy up to 1100 mJ and has a thermal resistance from junction to case of 0.2 to 0.4 K/W. It is RoHS compliant and halogen-free according to IEC61249-2-21, and qualified to JEDEC standards J-STD-20 and JESD-22.
Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.
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Manufacturer: Infineon Technologies
Win Source Part Number: 1186456-IPT007N06N
Family Name: IPT007N06N
Manufacturer Homepage: www.infineon.com
Alternative Parts (Cross-Reference): STO572N6F7AG; FDBL86561-F085 ;
Introduction Date: May 10, 2013
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
MOSFETs TRENCH 40<-<100V>
MOSFET N-Channel 60V 300A OptiMOS HSOF9
MOSFET N-Channel 60V 300A OptiMOS HSOF9
Trans MOSFET N-CH 60V 300A 9-Pin(8+Tab) HSOF
| Infineon Technologies AG | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPT007N06N | 1186456-IPT007N06N | 2088-IPT007N06N | 9064407P | 1787451 | IPT007N06N | 376-IPT007N06N |
| Product Name | N-Channel Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPT007N06N | 100V MOSFET Transistor | MOSFETs | MOSFETs | MOSFET | Trans MOSFET N-CH 60V 300A 9-Pin(8+Tab) HSOF |
| Polarity | N-Channel; N | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | Si/SiC | ||||||
| rDS(on) | 7.50E-4 ohms | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | PG-HSOF-8 | SOT3 | Reel | HSOF | Hsof |