Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R190C6 IPW60R190C6

Manufacturer: Infineon Technologies Win Source Part Number: 089861-IPW60R190C6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 151W (Tc) Family Name: IPW60R190C6 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20.2A (Tc) Gate-Source Threshold Voltage: 3.5V @ 630μA Max Gate Charge: 63nC @ 10V Max Input Capacitance: 1400pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 190 mOhm @ 9.5A, 10V Alternative Parts (Cross-Reference): STW20NM65N; SiHG21N65EF-GE3; STW25NM60ND; Introduction Date: August 27, 2009 ECCN: EAR99 Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance