Manufacturer: Infineon Technologies
Win Source Part Number: 069106-IPU09N03LAG
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 63W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO251-3
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2V @ 20μA
Max Gate Charge: 13nC @ 5V
Max Input Capacitance: 1642pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.8 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Power Field-Effect Transistor, 50A I(D), 25V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, TO-251, 3 PIN
| Win Source Electronics | Utmel Electronic Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | 069106-IPU09N03LAG | 9152-IPU09N03LAG |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPU09N03LAG | Power Field-Effect Transistor, 50A I(D), 25V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, TO-251, 3 PIN |
| Polarity | N-Channel; N-Channel | N-Channel |
| V(BR)DSS | 25 volts | |
| PD | 63000 milliwatts |
