MOSFET N-CH 600V 44A 8HSOF Product overview: IPT60R050G7XTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 44A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 44A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPT60R050G7XTMA1
N-Channel 650V 44A (Tc) 245W (Tc) Surface Mount PG-HSOF-8-2
N-Channel 650V 44A (Tc) 245W (Tc) Surface Mount PG-HSOF-8-2
N-Channel 650V 44A (Tc) 245W (Tc) Surface Mount PG-HSOF-8-2
Manufacturer: Infineon Technologies
Win Source Part Number: 874888-IPT60R050G7XT
Series: CoolMOS™ G7
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 650 V 44A (Tc) 245W (Tc) Surface Mount PG-HSOF-8-2
Package: 8-PowerSFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPT60R050
Categories: Discrete Semiconductor Products
Case / Package: PG-HSOF-8-2
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Limited
Quantity per package: 2000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPT60R050G7XTMA1CT, IPT60R050G7XTMA1DKR,
MOSFET, N-CH, 600V, 44A, 245W, HSOF; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 44A 8HSOF
MOSFET N-CH 600V 44A 8HSOF
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPT60R050G7XTMA1 | 2152556 | 2152556P | IPT60R050G7XTMA1DKR-ND | 874888-IPT60R050G7XTMA1 | 84AC6840 | IPT60R050G7XTMA1 | IPT60R050G7XTMA1 | IPT60R050G7XTMA1 |
| Product Name | 600V 44A MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPT60R050G7XTMA1 | Mosfet, N-Ch, 600V, 44A, 245W, Hsof; Transistor Polarity Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||
| V(BR)DSS | 600 volts | 600 volts | |||||||
| PD | 245 milliwatts | 245000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
