Infineon Technologies AG 650V 77.5A MOSFET Transistor IPW60R041C6

MOSFETs N-Ch 650V 77.5A TO247-3 CoolMOS C6 Product overview: IPW60R041C6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 77.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 77.5A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPW60R041C6 can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 086340-IPW60R041C6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 481W (Tc)
Family Name: IPW60R041C6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 77.5A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 2.96mA
Max Gate Charge: 290nC @ 10V
Max Input Capacitance: 6530pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 41 mOhm @ 44.4A, 10V
Alternative Parts (Cross-Reference): TSM60NB041PW C1G; SiHG73N60E-GE3; SiHG73N60E-E3;
Introduction Date: September 27, 2010
ECCN: EAR99
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited