MOSFET N-CH 650V 69A 8HSOF Product overview: IPT65R033G7XTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 69A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 69A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPT65R033G7XTMA1
Win Source Part Number: 1065369-IPT65R033G7X
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ C7
Package: Tape & Reel
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 28.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 1.44mA
Power Dissipation (Max): 391W (Tc)
Package / Case: 8-PowerSFN
Supplier Device Package: PG-HSOF-8-2
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 400 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IPT65R033G7XTMA1IPT6
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPT65R033G7XTMA1CT,2
Base Product Number: IPT65R033
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 650V 69A (Tc) 391W (Tc) Surface Mount PG-HSOF-8-2
MOSFET N-CH 650V 69A 8HSOF
MOSFET, N-CH, 650V, 69A, 150DEG C, 391W; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:69A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes
MOSFET N-CH 650V 69A 8HSOF
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPT65R033G7XTMA1 | 1065369-IPT65R033G7XTMA1 | IPT65R033G7XTMA1TR-ND | IPT65R033G7XTMA1 | IPT65R033G7XTMA1 | 49AC3835 | IPT65R033G7XTMA1 |
| Product Name | 650V 69A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 650V, 69A, 150Deg C, 391W; Channel Type Infineon | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 650 volts | 650 volts | |||||
| PD | 391000 milliwatts | 391000 milliwatts | 391000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | Tape & Reel (TR) | SOT3 | 8-PowerSFN | 8-PowerSFN | TO-3 | 8-PowerSFN |
