Infineon Technologies AG Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7... | |
| 600 V CoolMOS™ S7T SJ MOSFET with integrated temperature sensor in Q-DPAK TSC (PG-HDSOP-22) for an increased junction temperature sensing accuracy The CoolMOS™ S7T with embedded temperature sensor increases junction... | |
| 600 V CoolMOS™ S7TA SJ MOSFET with integrated temperature sensor in Q-DPAK TSC (PG-HDSOP-22) for an increased junction temperature sensing accuracy The CoolMOS™ S7TA with embedded temperature sensor increases junction... | |
| 600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R280PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R280PFD7S in a TO-252 DPAK... | |
| 600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R360PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R360PFD7S in a TO-252 DPAK... | |
| 600V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R600PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R600PFD7S in a TO-252 DPAK... | |
| 650 V CoolMOS™ 8 power transistor The 650 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 650 V CoolMOS™ 7 MOSFET family including C7 and CFD7. It... | |
| 650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in HDSOP-22 top-side cooling The 125mΩ IPDQ65R125CFD7A in QDPAK top side cooling SMD package is part of the automotive-qualified 650 V... | |
| 650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in HDSOP-22 top-side cooling The 17mΩ IPDQ65R017CFD7A in QDPAK top side cooling SMD package is part of the automotive-qualified 650 V... | |
| 650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in HDSOP-22 top-side cooling The 29mΩ IPDQ65R029CFD7A in QDPAK top side cooling SMD package is part of the automotive-qualified 650 V... | |
| 650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in HDSOP-22 top-side cooling The 40mΩ IPDQ65R040CFD7A in QDPAK top side cooling SMD package is part of the automotive-qualified 650 V... | |
| 650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in HDSOP-22 top-side cooling The 60mΩ IPDQ65R060CFD7A in QDPAK top side cooling SMD package is part of the automotive-qualified 650 V... | |
| 650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in HDSOP-22 top-side cooling The 80mΩ IPDQ65R080CFD7A in QDPAK top side cooling SMD package is part of the automotive-qualified 650 V... | |
| 650 V CoolMOS™ CFD7A N-channel automotive SJ power MOSFET in HDSOP-22 top-side cooling The 99mΩ IPDQ65R099CFD7A in QDPAK top side cooling SMD package is part of the automotive-qualified 650 V... | |
| 650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and... | |
| 950 V CoolMOS™ PFD7 superjunction MOSFET in TO-252 DPAK package The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPD95R450PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS... | |
| A new benchmark in efficiency and thermal performance 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance,... | |
| Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50 V more... | |
| Double DPAK (D-DPAK) Innovative top-side cooled SMD solution for high power applications Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power... | |
| Fully optimized best-in-class performance at 120 V This is a normal level 120 V MOSFET in D²PAK-7 pin package with 1.9 mOhm on-resistance. IPF019N12NM6 is part of Infineon’s OptiMOS™ 6... | |
| Infineon’s answer for flyback topologies Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS... | |
| Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ | |
| Infineon’s answer to resonant high power topologies The 600 V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. | |
| Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over... | |
| Infineon’s lowest RDS(on) * A SJ MOSFET in the novel top-side-cooled QDPAK package, ideal for low-frequency switching automotive applications The automotive qualified AEC-Q101, 600 V CoolMOS™ S7A SJ MOSFET... | |
| Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering... | |
| IPD60R600CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7,... | |
| IPDD60R037CM8 - 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7,... | |
| IPDD60R180CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7,... | |
| IPDQ60R007CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7,... | |
| IPDQ60R016CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7,... | |
| IPDQ60R037CM8 - 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7,... | |
| IPF036N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market. OptiMOS™ 6 150 V technology was designed to... | |
| IPF048N15NM6 leverages OptiMOS™ 6 150 V unparalleled performance and robustness for a suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ 5 150 V products. OptiMOS™ 6 150 V technology was... | |
| Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the... | |
| OptiMOS™ 5 single N-channel Linear FET 2 100 V, 1,8 mΩ, 259 A in D²PAK 7-pin The OptiMOS™ 5 Linear FET 2 technology enables best-in-class trade-off between on-state resistance and... | |
| OptiMOS™ 6 power MOSFET 135 V Normal Level in D²PAK 7-pin This product effectively bridges the gap between the 120 V and 150 V MOSFETs. In D²PAK 7-pin OptiMOS™ 6... | |
| OptiMOS™ 6 power MOSFET 150 V normal level in D²PAK 7-pin package IPF026N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly... | |
| OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 7-pin package IPF067N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power... | |
| OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 7-pin package IPF129N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power... | |
| P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 60V in DPAK package represents the new technology targeted for battery... | |
| Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2... | |
| StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK 7-pin package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 1.6 mOhm, addressing a broad range... | |
| StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK 7-pin package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 4.2 mOhm, addressing a broad range... | |
| StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK 7-pin package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 5 mOhm, addressing a broad range... | |
| StrongIRFET™ 2 single N-channel power MOSFET 40 V in D²PAK 7-pin package Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 1.35 mOhm, addressing a broad range... | |
| StrongIRFET™ 2 single N-channel power MOSFET 40 V in D²PAK 7-pin package Infineon's StrongIRFET™ 2 power MOSFET 40 V features lowest RDS(on) of 0.9 mOhm, addressing a broad range... | |
| StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK 7-pin package Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.2 mOhm, addressing a broad range... | |
| StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK 7-pin package Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.65 mOhm, addressing a broad range... | |
| StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK 7-pin package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 1.4 mOhm, addressing a broad range... | |
| StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK 7-pin package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 2.3 mOhm, addressing a broad range... | |
| StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK 7-pin package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 3.9 mOhm, addressing a broad range... | |
| Summary of Features Dual N-channel Logic Level - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Benefits... | |
| Summary of Features Dual N-channel Logic Level - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible... | |
| Summary of Features Dual N-channel Normal Level - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Benefits... | |
| Summary of Features Dual N-channel Normal Level - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible... | |
| Summary of Features N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Benefits... | |
| Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Benefits highest current capability 180A... | |
| Summary of Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Package (RoHS compliant) 100% Avalanche tested Benefits Low switching... | |
| Summary of Features N-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Simulation/SPICE-Mod el... | |
| Summary of Features OptiMOS™ - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS... | |
| Summary of Features P-channel - Logic Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested Benefits No... | |
| Summary of Features P-channel - Logic Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested Intended for... | |
| Summary of Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested Benefits No... | |
| The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs. | |
| The 600V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R017CFD7 in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R029CFD7 in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R040CFD7 in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R060CFD7 in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R080CFD7 in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R099CFD7 in... | |
| The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R125CFD7 in... |
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