Win Source Part Number: 1109826-IPD50N03S207
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel (TR)
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 85µA
Power Dissipation (Max): 136W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-11
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IPD50N03S2-07; SP000254462;
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP000254462,INFINFIP
Base Product Number: IPD50N03
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 30V 50A TO252-3 Product overview: IPD50N03S207ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 50A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 50A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD50N03S207ATMA
MOSFET N-CH 30V 50A TO252-3
N-Channel 30V 50A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11
MOSFET N-CH 30V 50A TO252-3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1109826-IPD50N03S207ATMA1 | 278-IPD50N03S207ATMA1 | 448-IPD50N03S207ATMA1CT-ND | IPD50N03S207ATMA1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 30V 50A TO252 MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||
| PD | 136000 milliwatts | 136000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | SOT3 | Tape & Reel (TR) | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | -55degC ~ 175degC (TJ) |
