Infineon Technologies AG Single FETs, MOSFETs IPD05N03LA G

Description
N-Channel 25V 50A (Tc) 94W (Tc) Surface Mount PG-TO252-3-11
Request a Quote Datasheet
Description
N-Channel 25V 50A (Tc) 94W (Tc) Surface Mount PG-TO252-3-11
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - IPD05N03LAGINTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD05N03LAGINTR-ND
Single FETs, MOSFETs IPD05N03LAGINTR-ND
N-Channel 25V 50A (Tc) 94W (Tc) Surface Mount PG-TO252-3-11

N-Channel 25V 50A (Tc) 94W (Tc) Surface Mount PG-TO252-3-11

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Singapore, Singapore
25V 50A TO252 MOSFET Transistor
278-IPD05N03LA G
25V 50A TO252 MOSFET Transistor 278-IPD05N03LA G
MOSFET N-CH 25V 50A TO252-3 Product overview: IPD05N03LA G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 50A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 50A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD05N03LA G can be used for catalog matching and distributor lookup.

MOSFET N-CH 25V 50A TO252-3 Product overview: IPD05N03LA G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 50A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 50A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD05N03LA G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD05N03LA G - 1045847-IPD05N03LA G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD05N03LA G
1045847-IPD05N03LA G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD05N03LA G 1045847-IPD05N03LA G
Manufacturer: Infineon Technologies Win Source Part Number: 1045847-IPD05N03LA G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 94W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2V @ 50μA Max Gate Charge: 25nC @ 5V Max Input Capacitance: 3110pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.1 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1045847-IPD05N03LA G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 94W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2V @ 50μA
Max Gate Charge: 25nC @ 5V
Max Input Capacitance: 3110pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.1 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPD05N03LAGINTR-ND 278-IPD05N03LA G 1045847-IPD05N03LA G
Product Name Single FETs, MOSFETs 25V 50A TO252 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD05N03LA G
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) SOT3; TO-252 (DPAK); PG-TO252-3
PD 94000 milliwatts 94000 milliwatts
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