The IPD35N10S3L-26 is an N-channel enhancement mode MOSFET designed for automotive applications, housed in a PG-TO252-3-11 package. It has a maximum drain-source voltage of 100 V, continuous drain current of 35 A at 25°C, and a maximum on-resistance of 24 mΩ at 10 V gate-source voltage. The device is AEC-Q101 qualified, operates at up to 175°C junction temperature, and is RoHS compliant. It features 100% avalanche testing with single-pulse avalanche energy of 175 mJ at 17 A. Thermal resistance from junction to case is 2.1 K/W, and it supports MSL1 reflow up to 260°C.
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MOSFETs N-Ch 100V 35A DPAK-2 OptiMOS-T Product overview: IPD35N10S3L-26 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 35A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 35A, DPAK, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPD35N10S3L-26 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1186132-IPD35N10S3L-
Family Name: IPD35N10S3L
Manufacturer Homepage: www.infineon.com
Alternative Parts (Cross-Reference): MDD1901RH; STD30N10F7; STD45N10F7; SQD40N10-25;
Introduction Date: April 21, 2008
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T
| Infineon Technologies AG | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD35N10S3L-26 | 2088-IPD35N10S3L-26 | 1186132-IPD35N10S3L-26 | IPD35N10S3L-26 |
| Product Name | Automotive MOSFET | 100V 35A DPAK MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD35N10S3L-26 | MOSFET |
| Polarity | N-Channel; N | N-Channel | ||
| Transistor Technology / Material | Si/SiC | |||
| VGS(off) | 1.2 to 2.4 volts | |||
| rDS(on) | 0.0240 ohms | |||
| TJ | -55 to 175 C (-67 to 347 F) |