Infineon Technologies AG Automotive MOSFET IPD35N10S3L-26

Description
Summary of Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested Benefits highest current capability 180A low switching and conduction power losses for high thermal efficiency robust packages with superior quality and reliability optimized total gate charge enables smaller driver output stages Potential Applications 48V inverter 48V DC/DC HID lighting Simulation/SPICE-Mod el Applications Belt starter generator 48 V – inverter ISG Diesel direct injection Electric vehicle (EV) drivetrain system EV traction inverter Multi-port fuel injection Designers who used this product also designed with IPB180N06S4-H1 | Automotive MOSFET IPD70N03S4L-04 | Automotive MOSFET IPG20N06S4L-26A | Automotive MOSFET TLE9180D-31QK | Gate driver ICs TLF35584QVVS1 | OPTIREG™ PMIC SAK-TC277TC-64F200N DC | AURIX™ Family – TC27xT 1EDI2002AS | Gate driver ICs IPD25N06S4L-30 | Automotive MOSFET 1EBN1001AE | Gate driver ICs BSS215P | Small signal/small power MOSFET FS820R08A6P2B | Automotive IGBT and CoolSiC™ MOSFET modules BSS205N | Small signal/small power MOSFET BAT64 | Schottky Diodes IPD50P04P4L-11 | Automotive MOSFET IPD70P04P4-09 | Automotive MOSFET BTN8962TA | MOTIX™ single half-bridge ICs for BDC motors TLE42664G | OPTIREG™ linear voltage regulators (LDO) IPD50P03P4L-11 | Automotive MOSFET IPB180N06S4-H1 | Automotive MOSFET IPD70N03S4L-04 | Automotive MOSFET IPG20N06S4L-26A | Automotive MOSFET TLE9180D-31QK | Gate driver ICs TLF35584QVVS1 | OPTIREG™ PMIC SAK-TC277TC-64F200N DC | AURIX™ Family – TC27xT 1EDI2002AS | Gate driver ICs IPD25N06S4L-30 | Automotive MOSFET 1 2 3 4 5
Request a Quote Datasheet
Description
Summary of Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested Benefits highest current capability 180A low switching and conduction power losses for high thermal efficiency robust packages with superior quality and reliability optimized total gate charge enables smaller driver output stages Potential Applications 48V inverter 48V DC/DC HID lighting Simulation/SPICE-Mod el Applications Belt starter generator 48 V – inverter ISG Diesel direct injection Electric vehicle (EV) drivetrain system EV traction inverter Multi-port fuel injection Designers who used this product also designed with IPB180N06S4-H1 | Automotive MOSFET IPD70N03S4L-04 | Automotive MOSFET IPG20N06S4L-26A | Automotive MOSFET TLE9180D-31QK | Gate driver ICs TLF35584QVVS1 | OPTIREG™ PMIC SAK-TC277TC-64F200N DC | AURIX™ Family – TC27xT 1EDI2002AS | Gate driver ICs IPD25N06S4L-30 | Automotive MOSFET 1EBN1001AE | Gate driver ICs BSS215P | Small signal/small power MOSFET FS820R08A6P2B | Automotive IGBT and CoolSiC™ MOSFET modules BSS205N | Small signal/small power MOSFET BAT64 | Schottky Diodes IPD50P04P4L-11 | Automotive MOSFET IPD70P04P4-09 | Automotive MOSFET BTN8962TA | MOTIX™ single half-bridge ICs for BDC motors TLE42664G | OPTIREG™ linear voltage regulators (LDO) IPD50P03P4L-11 | Automotive MOSFET IPB180N06S4-H1 | Automotive MOSFET IPD70N03S4L-04 | Automotive MOSFET IPG20N06S4L-26A | Automotive MOSFET TLE9180D-31QK | Gate driver ICs TLF35584QVVS1 | OPTIREG™ PMIC SAK-TC277TC-64F200N DC | AURIX™ Family – TC27xT 1EDI2002AS | Gate driver ICs IPD25N06S4L-30 | Automotive MOSFET 1 2 3 4 5
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Automotive MOSFET - IPD35N10S3L-26 - Infineon Technologies AG
Neubiberg, Germany
Automotive MOSFET
IPD35N10S3L-26
Automotive MOSFET IPD35N10S3L-26
Summary of Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested Benefits highest current capability 180A low switching and conduction power losses for high thermal efficiency robust packages with superior quality and reliability optimized total gate charge enables smaller driver output stages Potential Applications 48V inverter 48V DC/DC HID lighting Simulation/SPICE-Mod el Applications Belt starter generator 48 V – inverter ISG Diesel direct injection Electric vehicle (EV) drivetrain system EV traction inverter Multi-port fuel injection Designers who used this product also designed with IPB180N06S4-H1 | Automotive MOSFET IPD70N03S4L-04 | Automotive MOSFET IPG20N06S4L-26A | Automotive MOSFET TLE9180D-31QK | Gate driver ICs TLF35584QVVS1 | OPTIREG™ PMIC SAK-TC277TC-64F200N DC | AURIX™ Family – TC27xT 1EDI2002AS | Gate driver ICs IPD25N06S4L-30 | Automotive MOSFET 1EBN1001AE | Gate driver ICs BSS215P | Small signal/small power MOSFET FS820R08A6P2B | Automotive IGBT and CoolSiC™ MOSFET modules BSS205N | Small signal/small power MOSFET BAT64 | Schottky Diodes IPD50P04P4L-11 | Automotive MOSFET IPD70P04P4-09 | Automotive MOSFET BTN8962TA | MOTIX™ single half-bridge ICs for BDC motors TLE42664G | OPTIREG™ linear voltage regulators (LDO) IPD50P03P4L-11 | Automotive MOSFET IPB180N06S4-H1 | Automotive MOSFET IPD70N03S4L-04 | Automotive MOSFET IPG20N06S4L-26A | Automotive MOSFET TLE9180D-31QK | Gate driver ICs TLF35584QVVS1 | OPTIREG™ PMIC SAK-TC277TC-64F200N DC | AURIX™ Family – TC27xT 1EDI2002AS | Gate driver ICs IPD25N06S4L-30 | Automotive MOSFET 1 2 3 4 5

Summary of Features

  • N-channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green product (RoHS compliant)
  • 100% Avalanche tested

Benefits

  • highest current capability 180A
  • low switching and conduction power losses for high thermal efficiency
  • robust packages with superior quality and reliability
  • optimized total gate charge enables smaller driver output stages

Potential Applications

  • 48V inverter
  • 48V DC/DC
  • HID lighting

Simulation/SPICE-Model


Applications

  • Belt starter generator 48 V – inverter ISG
  • Diesel direct injection
  • Electric vehicle (EV) drivetrain system
  • EV traction inverter
  • Multi-port fuel injection

Designers who used this product also designed with


  • IPB180N06S4-H1 |
    Automotive MOSFET
  • IPD70N03S4L-04 |
    Automotive MOSFET
  • IPG20N06S4L-26A |
    Automotive MOSFET
  • TLE9180D-31QK |
    Gate driver ICs
  • TLF35584QVVS1 |
    OPTIREG™ PMIC
  • SAK-TC277TC-64F200N DC |
    AURIX™ Family – TC27xT
  • 1EDI2002AS |
    Gate driver ICs
  • IPD25N06S4L-30 |
    Automotive MOSFET
  • 1EBN1001AE |
    Gate driver ICs
  • BSS215P |
    Small signal/small power MOSFET
  • FS820R08A6P2B |
    Automotive IGBT and CoolSiC™ MOSFET modules
  • BSS205N |
    Small signal/small power MOSFET
  • BAT64 |
    Schottky Diodes
  • IPD50P04P4L-11 |
    Automotive MOSFET
  • IPD70P04P4-09 |
    Automotive MOSFET
  • BTN8962TA |
    MOTIX™ single half-bridge ICs for BDC motors
  • TLE42664G |
    OPTIREG™ linear voltage regulators (LDO)
  • IPD50P03P4L-11 |
    Automotive MOSFET
  • IPB180N06S4-H1 |
    Automotive MOSFET
  • IPD70N03S4L-04 |
    Automotive MOSFET
  • IPG20N06S4L-26A |
    Automotive MOSFET
  • TLE9180D-31QK |
    Gate driver ICs
  • TLF35584QVVS1 |
    OPTIREG™ PMIC
  • SAK-TC277TC-64F200N DC |
    AURIX™ Family – TC27xT
  • 1EDI2002AS |
    Gate driver ICs
  • IPD25N06S4L-30 |
    Automotive MOSFET

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Supplier's Site Datasheet
Singapore
100V 35A DPAK MOSFET Transistor
2088-IPD35N10S3L-26
100V 35A DPAK MOSFET Transistor 2088-IPD35N10S3L-26
MOSFETs N-Ch 100V 35A DPAK-2 OptiMOS-T Product overview: IPD35N10S3L-26 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 35A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 35A, DPAK, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPD35N10S3L-26 can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 100V 35A DPAK-2 OptiMOS-T Product overview: IPD35N10S3L-26 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 35A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 35A, DPAK, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPD35N10S3L-26 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD35N10S3L-26 - 1186132-IPD35N10S3L-26 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD35N10S3L-26
1186132-IPD35N10S3L-26
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD35N10S3L-26 1186132-IPD35N10S3L-26
Manufacturer: Infineon Technologies Win Source Part Number: 1186132-IPD35N10S3L- 26 Family Name: IPD35N10S3L Manufacturer Homepage: www.infineon.com Alternative Parts (Cross-Reference): MDD1901RH; STD30N10F7; STD45N10F7; SQD40N10-25; Introduction Date: April 21, 2008 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1186132-IPD35N10S3L-26
Family Name: IPD35N10S3L
Manufacturer Homepage: www.infineon.com
Alternative Parts (Cross-Reference): MDD1901RH; STD30N10F7; STD45N10F7; SQD40N10-25;
Introduction Date: April 21, 2008
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now
Sheung Wan, Hong Kong
MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T

MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPD35N10S3L-26 2088-IPD35N10S3L-26 1186132-IPD35N10S3L-26 IPD35N10S3L-26
Product Name Automotive MOSFET 100V 35A DPAK MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD35N10S3L-26 MOSFET
Polarity N-Channel; N N-Channel
Transistor Technology / Material Si/SiC
VGS(off) 1.2 to 2.4 volts
rDS(on) 0.0240 ohms
TJ -55 to 175 C (-67 to 347 F)
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