Manufacturer: Infineon Technologies
Win Source Part Number: 1045871-IPD50R500CEB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Super Junction
Polarity: N-Channel
Power Dissipation (Max): 57W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 13V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 7.6A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 200μA
Max Gate Charge: 18.7nC @ 10V
Max Input Capacitance: 433pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 500 mOhm @ 2.3A, 13V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
N-Channel 500V 7.6A (Tc) 57W (Tc) Surface Mount PG-TO252-3-11
MOSFET N-CH 500V 7.6A TO252-3
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1045871-IPD50R500CEBTMA1 | IPD50R500CEBTMA1TR-ND | IPD50R500CEBTMA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD50R500CEBTMA1 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 500 volts | ||
| PD | 57000 milliwatts |
