Infineon Technologies AG Single FETs, MOSFETs IPD50R500CEBTMA1

Description
N-Channel 500V 7.6A (Tc) 57W (Tc) Surface Mount PG-TO252-3-11
Request a Quote Datasheet
Description
N-Channel 500V 7.6A (Tc) 57W (Tc) Surface Mount PG-TO252-3-11
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IPD50R500CEBTMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD50R500CEBTMA1TR-ND
Single FETs, MOSFETs IPD50R500CEBTMA1TR-ND
N-Channel 500V 7.6A (Tc) 57W (Tc) Surface Mount PG-TO252-3-11

N-Channel 500V 7.6A (Tc) 57W (Tc) Surface Mount PG-TO252-3-11

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD50R500CEBTMA1 - 1045871-IPD50R500CEBTMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD50R500CEBTMA1
1045871-IPD50R500CEBTMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD50R500CEBTMA1 1045871-IPD50R500CEBTMA1
Manufacturer: Infineon Technologies Win Source Part Number: 1045871-IPD50R500CEB TMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Super Junction Polarity: N-Channel Power Dissipation (Max): 57W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 13V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 7.6A (Tc) Gate-Source Threshold Voltage: 3.5V @ 200μA Max Gate Charge: 18.7nC @ 10V Max Input Capacitance: 433pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 500 mOhm @ 2.3A, 13V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1045871-IPD50R500CEBTMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Super Junction
Polarity: N-Channel
Power Dissipation (Max): 57W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 13V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 7.6A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 200μA
Max Gate Charge: 18.7nC @ 10V
Max Input Capacitance: 433pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 500 mOhm @ 2.3A, 13V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD50R500CEBTMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD50R500CEBTMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD50R500CEBTMA1
MOSFET N-CH 500V 7.6A TO252-3

MOSFET N-CH 500V 7.6A TO252-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IPD50R500CEBTMA1TR-ND 1045871-IPD50R500CEBTMA1 IPD50R500CEBTMA1
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD50R500CEBTMA1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); PG-TO252-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 500 volts
Unlock Full Specs
to access all available technical data