Infineon Technologies AG 500V 7.6A TO252 MOSFET Transistor IPD50R500CEBTMA1

Description
MOSFET N-CH 500V 7.6A TO252-3 Product overview: IPD50R500CEBTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 7.6A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 7.6A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD50R500CEBTMA1 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 500V 7.6A TO252-3 Product overview: IPD50R500CEBTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 7.6A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 7.6A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD50R500CEBTMA1 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
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Singapore
500V 7.6A TO252 MOSFET Transistor
278-IPD50R500CEBTMA1
500V 7.6A TO252 MOSFET Transistor 278-IPD50R500CEBTMA1
MOSFET N-CH 500V 7.6A TO252-3 Product overview: IPD50R500CEBTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 7.6A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 7.6A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD50R500CEBTMA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 500V 7.6A TO252-3 Product overview: IPD50R500CEBTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 7.6A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 7.6A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD50R500CEBTMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD50R500CEBTMA1 - 1045871-IPD50R500CEBTMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD50R500CEBTMA1
1045871-IPD50R500CEBTMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD50R500CEBTMA1 1045871-IPD50R500CEBTMA1
Manufacturer: Infineon Technologies Win Source Part Number: 1045871-IPD50R500CEB TMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Super Junction Polarity: N-Channel Power Dissipation (Max): 57W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 13V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 7.6A (Tc) Gate-Source Threshold Voltage: 3.5V @ 200μA Max Gate Charge: 18.7nC @ 10V Max Input Capacitance: 433pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 500 mOhm @ 2.3A, 13V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1045871-IPD50R500CEBTMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Super Junction
Polarity: N-Channel
Power Dissipation (Max): 57W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 13V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 7.6A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 200μA
Max Gate Charge: 18.7nC @ 10V
Max Input Capacitance: 433pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 500 mOhm @ 2.3A, 13V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IPD50R500CEBTMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD50R500CEBTMA1TR-ND
Single FETs, MOSFETs IPD50R500CEBTMA1TR-ND
N-Channel 500V 7.6A (Tc) 57W (Tc) Surface Mount PG-TO252-3-11

N-Channel 500V 7.6A (Tc) 57W (Tc) Surface Mount PG-TO252-3-11

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD50R500CEBTMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD50R500CEBTMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD50R500CEBTMA1
MOSFET N-CH 500V 7.6A TO252-3

MOSFET N-CH 500V 7.6A TO252-3

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 278-IPD50R500CEBTMA1 1045871-IPD50R500CEBTMA1 IPD50R500CEBTMA1TR-ND IPD50R500CEBTMA1
Product Name 500V 7.6A TO252 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD50R500CEBTMA1 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 57000 milliwatts 57000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type Tape & Reel (TR) SOT3; TO-252 (DPAK); PG-TO252-3 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
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