Infineon Technologies AG MOSFET IPD135N03L G

Description
MOSFET N-Ch 30V 30A DPAK-2 OptiMOS 3
Description
MOSFET N-Ch 30V 30A DPAK-2 OptiMOS 3
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N-channel MOSFET in a DPAK-2 package with a drain-source voltage rating of 30 V, continuous drain current of 30 A at 25°C, and a typical on-resistance of 1.35 mΩ at 10 V gate-source voltage. The device is optimized for switching applications, features a gate charge of 38 nC, and operates within a junction temperature range of -55°C to 175°C. It meets the RoHS standard and is certified to AEC-Q101 for automotive reliability.

Datasheet Summary
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N-channel MOSFET in a DPAK-2 package with a drain-source voltage rating of 30 V, continuous drain current of 30 A at 25°C, and a typical on-resistance of 1.35 mΩ at 10 V gate-source voltage. The device is optimized for switching applications, features a gate charge of 38 nC, and operates within a junction temperature range of -55°C to 175°C. It meets the RoHS standard and is certified to AEC-Q101 for automotive reliability.

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Sheung Wan, Hong Kong
MOSFET N-Ch 30V 30A DPAK-2 OptiMOS 3

MOSFET N-Ch 30V 30A DPAK-2 OptiMOS 3

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPD135N03L G
Product Name MOSFET
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