MOSFET P-CH 60V 4.3A TO252-3
MOSFET P-CH 60V 4.3A TO252-3 Product overview: IPD40DP06NMATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 4.3A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 4.3A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD40DP06NMATMA1
IPD40DP06NM - P-channel MOSFETs in normal and logic level
Win Source Part Number: 1123157-IPD40DP06NMA
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel (TR)
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 4V @ 166µA
Power Dissipation (Max): 19W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-313
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IPD40DP06NM;
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP004987264
Base Product Number: IPD40DP06
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET P-CH 60V 4.3A TO252-3
MOSFET P-CH 60V 4.3A TO252-3
P-Channel 60V 4.3A (Tc) 19W (Tc) Surface Mount PG-TO252-3-313
MOSFET, P-CH, -60V, -4.3A, 175DEG C, 19W ROHS COMPLIANT: YES
MOSFET P-CH 60V 4.3A TO252-3
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Rochester Electronics | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD40DP06NMATMA1 | 278-IPD40DP06NMATMA1 | 2733007 | IPD40DP06NMATMA1 | 1123157-IPD40DP06NMATMA1 | 448-IPD40DP06NMATMA1CT-ND | 42AH1836 | IPD40DP06NMATMA1 | IPD40DP06NMATMA1 |
| Product Name | Single FETs, MOSFETs | 60V 4.3A TO252 MOSFET Transistor | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, P-Ch, -60V, -4.3A, 175Deg C, 19W Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 60 volts | 60 volts | |||||||
| IDSS | 4300 milliamps | ||||||||
| PD | 19000 milliwatts | 19 milliwatts | 19000 milliwatts |
