Infineon Technologies AG MOSFETs IPD40DP06NMATMA1

Description
Infineon IPD40DP06NMATMA1
Request a Quote Datasheet
Description
Infineon IPD40DP06NMATMA1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 2733007 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2733007
MOSFETs 2733007
Infineon IPD40DP06NMATMA1

Infineon IPD40DP06NMATMA1

Supplier's Site
MOSFETs - 2733008 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2733008
MOSFETs 2733008
Infineon IPD40DP06NMATMA1

Infineon IPD40DP06NMATMA1

Supplier's Site
Single FETs, MOSFETs - IPD40DP06NMATMA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPD40DP06NMATMA1
Single FETs, MOSFETs IPD40DP06NMATMA1
MOSFET P-CH 60V 4.3A TO252-3

MOSFET P-CH 60V 4.3A TO252-3

Supplier's Site Datasheet
Single FETs, MOSFETs - 448-IPD40DP06NMATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IPD40DP06NMATMA1CT-ND
Single FETs, MOSFETs 448-IPD40DP06NMATMA1CT-ND
MOSFET P-CH 60V 4.3A TO252-3

MOSFET P-CH 60V 4.3A TO252-3

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Single FETs, MOSFETs - 448-IPD40DP06NMATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IPD40DP06NMATMA1DKR-ND
Single FETs, MOSFETs 448-IPD40DP06NMATMA1DKR-ND
MOSFET P-CH 60V 4.3A TO252-3

MOSFET P-CH 60V 4.3A TO252-3

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Single FETs, MOSFETs - 448-IPD40DP06NMATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IPD40DP06NMATMA1TR-ND
Single FETs, MOSFETs 448-IPD40DP06NMATMA1TR-ND
P-Channel 60V 4.3A (Tc) 19W (Tc) Surface Mount PG-TO252-3-313

P-Channel 60V 4.3A (Tc) 19W (Tc) Surface Mount PG-TO252-3-313

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1123157-IPD40DP06NMATMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1123157-IPD40DP06NMATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1123157-IPD40DP06NMATMA1
Win Source Part Number: 1123157-IPD40DP06NMA TMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ Package: Tape & Reel (TR) Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 4V @ 166µA Power Dissipation (Max): 19W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3-313 Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): IPD40DP06NM; ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP004987264 Base Product Number: IPD40DP06 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1123157-IPD40DP06NMATMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: OptiMOS™
Package: Tape & Reel (TR)
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 4V @ 166µA
Power Dissipation (Max): 19W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-313
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IPD40DP06NM;
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP004987264
Base Product Number: IPD40DP06
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Singapore
60V 4.3A TO252 MOSFET Transistor
278-IPD40DP06NMATMA1
60V 4.3A TO252 MOSFET Transistor 278-IPD40DP06NMATMA1
MOSFET P-CH 60V 4.3A TO252-3 Product overview: IPD40DP06NMATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 4.3A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 4.3A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD40DP06NMATMA1 can be used for catalog matching and distributor lookup.

MOSFET P-CH 60V 4.3A TO252-3 Product overview: IPD40DP06NMATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 4.3A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 4.3A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD40DP06NMATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - IPD40DP06NMATMA1 - Rochester Electronics
Newburyport, MA, United States
IPD40DP06NM - P-channel MOSFETs in normal and logic level

IPD40DP06NM - P-channel MOSFETs in normal and logic level

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD40DP06NMATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD40DP06NMATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD40DP06NMATMA1
MOSFET P-CH 60V 4.3A TO252-3

MOSFET P-CH 60V 4.3A TO252-3

Supplier's Site
Mosfet, P-Ch, -60V, -4.3A, 175Deg C, 19W Rohs Compliant Infineon - 42AH1836 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -60V, -4.3A, 175Deg C, 19W Rohs Compliant Infineon
42AH1836
Mosfet, P-Ch, -60V, -4.3A, 175Deg C, 19W Rohs Compliant Infineon 42AH1836
MOSFET, P-CH, -60V, -4.3A, 175DEG C, 19W ROHS COMPLIANT: YES

MOSFET, P-CH, -60V, -4.3A, 175DEG C, 19W ROHS COMPLIANT: YES

Supplier's Site Datasheet
MOSFET TRENCH 40<-<100V

MOSFET TRENCH 40<-<100V

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Technical Specifications

  RS Components, Ltd. ODG (Origin Data Global) DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2733007 IPD40DP06NMATMA1 448-IPD40DP06NMATMA1CT-ND 1123157-IPD40DP06NMATMA1 278-IPD40DP06NMATMA1 IPD40DP06NMATMA1 IPD40DP06NMATMA1 42AH1836 IPD40DP06NMATMA1
Product Name MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 60V 4.3A TO252 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, -60V, -4.3A, 175Deg C, 19W Rohs Compliant Infineon MOSFET
Package Type PG-TO252-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3 Tape & Reel (TR) PG-TO252-3 Surface Mount TO-3
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
IDSS 4300 milliamps
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