Win Source Part Number: 1338128-IPD50N06S214
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 2,500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 55 V
Power Dissipation (Max): 136W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab) , SC-63
Supplier Device Package: PG-TO252-3-11
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Base Product Number: IPD50
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 32A, 10V
Vgs(th) (Max) @ Id: 4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
N-Channel 55V 50A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11
MOSFET N-CH 55V 50A TO252-31
MOSFET N-CH 55V 50A TO252-31
MOSFET N-CH 55V 50A TO252-31 Product overview: IPD50N06S214ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 50A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 50A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD50N06S214ATMA
MOSFET N-CH 55V 50A TO252-31
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1338128-IPD50N06S214ATMA2 | 448-IPD50N06S214ATMA2TR-ND | 278-IPD50N06S214ATMA2 | IPD50N06S214ATMA2 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | 55V 50A TO252 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | |
| PD | 136000 milliwatts | 136 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | SOT3 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |