N-Channel 80V 90A (Tc) 150W (Tc) Surface Mount PG-TO252-3
N-Channel 80V 90A (Tc) 150W (Tc) Surface Mount PG-TO252-3
N-Channel 80V 90A (Tc) 150W (Tc) Surface Mount PG-TO252-3
MOSFET N-CH 80V 90A TO252-3 Product overview: IPD053N08N3GATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 90A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 90A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD053N08N3GATMA
MOSFET N-Ch 80V 90A OptiMOS3 DPAK
Manufacturer: Infineon Technologies
Win Source Part Number: 106803-IPD053N08N3GA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 90μA
Max Gate Charge: 69nC @ 10V
Max Input Capacitance: 4750pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.3 mOhm @ 90A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
MOSFET, N CHANNEL, 80V, 90A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:90A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes
MOSFET N-CH 80V 90A TO252-3
MOSFET N-CH 80V 90A TO252-3
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPD053N08N3GATMA1CT-ND | 278-IPD053N08N3GATMA1 | 1702283 | 1711937P | 106803-IPD053N08N3GATMA1 | IPD053N08N3GATMA1 | 60R2692 | IPD053N08N3GATMA1 | IPD053N08N3GATMA1 |
| Product Name | Single FETs, MOSFETs | 80V 90A TO252 MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD053N08N3GATMA1 | MOSFET | Mosfet, N Channel, 80V, 90A, To-252; Channel Type Infineon | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | TO-252 (DPAK); To-252 | TO-252 (DPAK); TO-252 | SOT3; TO-252 (DPAK); PG-TO252-3 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||
| V(BR)DSS | 80 volts | 80 volts | 80 volts | ||||||
| Transconductance | 0.0560 kS |
