Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD09N03LBG IPD09N03LBG

Manufacturer: Infineon Technologies
Win Source Part Number: 068989-IPD09N03LBG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 58W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2V @ 20μA
Max Gate Charge: 13nC @ 5V
Max Input Capacitance: 1600pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.1 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

MOSFET N-CH 30V 50A DPAK Product overview: IPD09N03LBG from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 50A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 50A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPD09N03LBG can be used for catalog matching and distributor lookup.