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IPD50N06 - 55V-60V N-CHANNEL AUT
Manufacturer: Infineon Technologies
Win Source Part Number: 1186138-IPD50N06S2-1
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
IPD50N06 - 55V-60V N-CHANNEL AUT Product overview: IPD50N06S2-14 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 55V, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 60V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPD50N06S2-14 can be used for catalog matching and distributor lookup.
| Infineon Technologies AG | ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD50N06S2-14 | IPD50N06S2-14 | 1186138-IPD50N06S2-14 | 285-IPD50N06S2-14 |
| Product Name | Power - MOSFET (Si/SiC) - Automotive MOSFET - IPD50N06S2-14 | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD50N06S2-14 | N-Channel 55V 60V MOSFET Transistor |
| Polarity | N-Channel; N | N-Channel; N-Channel | ||
| Transistor Technology / Material | Si/SiC | MOSFET (Metal Oxide) | ||
| VGS(off) | 2.1 to 4 volts | |||
| rDS(on) | 0.0144 ohms | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |