Infineon Technologies AG Power - MOSFET (Si/SiC) - Automotive MOSFET - IPD50N06S2-14 IPD50N06S2-14

Description
Summary of Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Benefits world's lowest RDS at 55V (on) in planar technology highest current capability lowest switching and conduction power losses for highest thermal efficiency robust packages with superior quality and reliability Optimized total gate charge enables smaller driver output stages Potential Applications Valves control Solenoids control Lighting Single-ended motors Simulation/SPICE-Mod el Applications Domestic robots Electronic stability control Designers who used this product also designed with BTS5200-4EKA | PROFET™ + 12V | automotive smart high-side switch SAK-TC367DP-64F300S AA | AURIX™ Family – TC36xDP TLF11251LD | OPTIREG™ PMIC TLF35584QVVS1 | OPTIREG™ PMIC AUIR3242STR | Gate driver ICs BTS5020-2EKA | PROFET™ + 12V | automotive smart high-side switch BTS5008-1EKB | PROFET™ + 12V | automotive smart high-side switch IPD90P03P4L-04 | Automotive MOSFET SAK-TC397XP-256F300S BD | AURIX™ Family – TC39xXX IAUC120N04S6N006 | Automotive MOSFET BTS5200-4EKA | PROFET™ + 12V | automotive smart high-side switch SAK-TC367DP-64F300S AA | AURIX™ Family – TC36xDP TLF11251LD | OPTIREG™ PMIC TLF35584QVVS1 | OPTIREG™ PMIC AUIR3242STR | Gate driver ICs BTS5020-2EKA | PROFET™ + 12V | automotive smart high-side switch BTS5008-1EKB | PROFET™ + 12V | automotive smart high-side switch IPD90P03P4L-04 | Automotive MOSFET 1 2 3
  • Power - MOSFET (Si/SiC) - Automotive MOSFET - IPD50N06S2-14 - IPD50N06S2-14 - Infineon Technologies AG
    Infineon Technologies AG
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD50N06S2-14 - 1186138-IPD50N06S2-14 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IPD50N06S2-14 - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
Summary of Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Benefits world's lowest RDS at 55V (on) in planar technology highest current capability lowest switching and conduction power losses for highest thermal efficiency robust packages with superior quality and reliability Optimized total gate charge enables smaller driver output stages Potential Applications Valves control Solenoids control Lighting Single-ended motors Simulation/SPICE-Mod el Applications Domestic robots Electronic stability control Designers who used this product also designed with BTS5200-4EKA | PROFET™ + 12V | automotive smart high-side switch SAK-TC367DP-64F300S AA | AURIX™ Family – TC36xDP TLF11251LD | OPTIREG™ PMIC TLF35584QVVS1 | OPTIREG™ PMIC AUIR3242STR | Gate driver ICs BTS5020-2EKA | PROFET™ + 12V | automotive smart high-side switch BTS5008-1EKB | PROFET™ + 12V | automotive smart high-side switch IPD90P03P4L-04 | Automotive MOSFET SAK-TC397XP-256F300S BD | AURIX™ Family – TC39xXX IAUC120N04S6N006 | Automotive MOSFET BTS5200-4EKA | PROFET™ + 12V | automotive smart high-side switch SAK-TC367DP-64F300S AA | AURIX™ Family – TC36xDP TLF11251LD | OPTIREG™ PMIC TLF35584QVVS1 | OPTIREG™ PMIC AUIR3242STR | Gate driver ICs BTS5020-2EKA | PROFET™ + 12V | automotive smart high-side switch BTS5008-1EKB | PROFET™ + 12V | automotive smart high-side switch IPD90P03P4L-04 | Automotive MOSFET 1 2 3
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IPD50N06S2-14 is an N-channel enhancement mode MOSFET designed for automotive applications, rated for 55 V drain-source voltage and 50 A continuous drain current. It is packaged in a PG-TO252-3-11 case with a maximum on-state resistance of 14.4 mΩ at 10 V gate-source voltage and 32 A drain current. The device operates at up to 175°C junction temperature and is AEC-Q101 qualified. It features 100% avalanche tested reliability, a green (lead-free) package, and MSL1 rating for reflow up to 260°C. Thermal resistance from junction to case is 1.1 K/W. The part includes integrated reverse diode with 50 A continuous forward current and 200 A pulsed current capability.

Datasheet Summary
Powered by GS/AI

The IPD50N06S2-14 is an N-channel enhancement mode MOSFET designed for automotive applications, rated for 55 V drain-source voltage and 50 A continuous drain current. It is packaged in a PG-TO252-3-11 case with a maximum on-state resistance of 14.4 mΩ at 10 V gate-source voltage and 32 A drain current. The device operates at up to 175°C junction temperature and is AEC-Q101 qualified. It features 100% avalanche tested reliability, a green (lead-free) package, and MSL1 rating for reflow up to 260°C. Thermal resistance from junction to case is 1.1 K/W. The part includes integrated reverse diode with 50 A continuous forward current and 200 A pulsed current capability.

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPD50N06S2-14 - IPD50N06S2-14 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPD50N06S2-14
IPD50N06S2-14
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPD50N06S2-14 IPD50N06S2-14
Summary of Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Benefits world's lowest RDS at 55V (on) in planar technology highest current capability lowest switching and conduction power losses for highest thermal efficiency robust packages with superior quality and reliability Optimized total gate charge enables smaller driver output stages Potential Applications Valves control Solenoids control Lighting Single-ended motors Simulation/SPICE-Mod el Applications Domestic robots Electronic stability control Designers who used this product also designed with BTS5200-4EKA | PROFET™ + 12V | automotive smart high-side switch SAK-TC367DP-64F300S AA | AURIX™ Family – TC36xDP TLF11251LD | OPTIREG™ PMIC TLF35584QVVS1 | OPTIREG™ PMIC AUIR3242STR | Gate driver ICs BTS5020-2EKA | PROFET™ + 12V | automotive smart high-side switch BTS5008-1EKB | PROFET™ + 12V | automotive smart high-side switch IPD90P03P4L-04 | Automotive MOSFET SAK-TC397XP-256F300S BD | AURIX™ Family – TC39xXX IAUC120N04S6N006 | Automotive MOSFET BTS5200-4EKA | PROFET™ + 12V | automotive smart high-side switch SAK-TC367DP-64F300S AA | AURIX™ Family – TC36xDP TLF11251LD | OPTIREG™ PMIC TLF35584QVVS1 | OPTIREG™ PMIC AUIR3242STR | Gate driver ICs BTS5020-2EKA | PROFET™ + 12V | automotive smart high-side switch BTS5008-1EKB | PROFET™ + 12V | automotive smart high-side switch IPD90P03P4L-04 | Automotive MOSFET 1 2 3

Summary of Features

  • • N-channel - Enhancement mode
  • • Automotive AEC Q101 qualified
  • • MSL1 up to 260°C peak reflow
  • • 175°C operating temperature
  • • Green package (lead free)
  • • Ultra low Rds(on)
  • • 100% Avalanche tested

Benefits

  • world's lowest RDS at 55V (on) in planar technology
  • highest current capability
  • lowest switching and conduction power losses for highest thermal efficiency
  • robust packages with superior quality and reliability
  • Optimized total gate charge enables smaller driver output stages

Potential Applications

  • Valves control
  • Solenoids control
  • Lighting
  • Single-ended motors

Simulation/SPICE-Model


Applications

  • Domestic robots
  • Electronic stability control

Designers who used this product also designed with


  • BTS5200-4EKA |
    PROFET™ + 12V | automotive smart high-side switch
  • SAK-TC367DP-64F300S AA |
    AURIX™ Family – TC36xDP
  • TLF11251LD |
    OPTIREG™ PMIC
  • TLF35584QVVS1 |
    OPTIREG™ PMIC
  • AUIR3242STR |
    Gate driver ICs
  • BTS5020-2EKA |
    PROFET™ + 12V | automotive smart high-side switch
  • BTS5008-1EKB |
    PROFET™ + 12V | automotive smart high-side switch
  • IPD90P03P4L-04 |
    Automotive MOSFET
  • SAK-TC397XP-256F300S BD |
    AURIX™ Family – TC39xXX
  • IAUC120N04S6N006 |
    Automotive MOSFET
  • BTS5200-4EKA |
    PROFET™ + 12V | automotive smart high-side switch
  • SAK-TC367DP-64F300S AA |
    AURIX™ Family – TC36xDP
  • TLF11251LD |
    OPTIREG™ PMIC
  • TLF35584QVVS1 |
    OPTIREG™ PMIC
  • AUIR3242STR |
    Gate driver ICs
  • BTS5020-2EKA |
    PROFET™ + 12V | automotive smart high-side switch
  • BTS5008-1EKB |
    PROFET™ + 12V | automotive smart high-side switch
  • IPD90P03P4L-04 |
    Automotive MOSFET

1
2
3

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
N-Channel 55V 60V MOSFET Transistor
285-IPD50N06S2-14
N-Channel 55V 60V MOSFET Transistor 285-IPD50N06S2-14
IPD50N06 - 55V-60V N-CHANNEL AUT Product overview: IPD50N06S2-14 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 55V, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 60V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPD50N06S2-14 can be used for catalog matching and distributor lookup.

IPD50N06 - 55V-60V N-CHANNEL AUT Product overview: IPD50N06S2-14 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 55V, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 60V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPD50N06S2-14 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD50N06S2-14 - 1186138-IPD50N06S2-14 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD50N06S2-14
1186138-IPD50N06S2-14
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD50N06S2-14 1186138-IPD50N06S2-14
Manufacturer: Infineon Technologies Win Source Part Number: 1186138-IPD50N06S2-1 4 Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1186138-IPD50N06S2-14
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

Buy Now
Single FETs, MOSFETs - IPD50N06S2-14 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPD50N06S2-14
Single FETs, MOSFETs IPD50N06S2-14
IPD50N06 - 55V-60V N-CHANNEL AUT

IPD50N06 - 55V-60V N-CHANNEL AUT

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPD50N06S2-14 285-IPD50N06S2-14 1186138-IPD50N06S2-14 IPD50N06S2-14
Product Name Power - MOSFET (Si/SiC) - Automotive MOSFET - IPD50N06S2-14 N-Channel 55V 60V MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD50N06S2-14 Single FETs, MOSFETs
Polarity N-Channel; N N-Channel; N-Channel
Transistor Technology / Material Si/SiC MOSFET (Metal Oxide)
VGS(off) 2.1 to 4 volts
rDS(on) 0.0144 ohms
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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