Infineon Technologies AG Automotive MOSFET IPD50P04P4-13

Description
Summary of Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested Benefits No charge pump required for high side drive. Simple interface drive circuit World's lowest RDSon at 40V Highest current capability Lowest switching and conduction power losses for highest thermal efficiency Robust packages with superior quality and reliability Standard packages TO-252, TO-263, TO-220, TO-262 Potential Applications High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors) Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump Simulation/SPICE-Mod el Applications Automotive 48 V battery management system (BMS) Automotive high-voltage battery management system (BMS) Domain controller for ADAS and autonomous driving Light electric vehicles (LEV) Designers who used this product also designed with BTS3110N | Classic HITFET™ 12V | automotive smart low-side switches BTS3080EJ | HITFET™ + 12V | automotive low-side switch BSC060P03NS3E G | P-Channel Power MOSFET BTS50080-1TEA | Classic PROFET™ 12V | automotive smart high-side switch BTS7004-1EPP | PROFET™ +2 12V | automotive smart high-side switch BSP171P | Small signal/small power MOSFET SAK-TC397XA-256F300S BD | AURIX™ Family – TC39xXA (ADAS) S25FS512SDSBHM213 | Quad SPI Flash BSP452 | Classic PROFET™ 12V | automotive smart high-side switch TLE9250VLE | Automotive CAN transceivers 1EDI3021AS | Gate driver ICs IRFB4115 | N-Channel Power MOSFET BSC014N04LS | N-Channel Power MOSFET BTS3110N | Classic HITFET™ 12V | automotive smart low-side switches BTS3080EJ | HITFET™ + 12V | automotive low-side switch BSC060P03NS3E G | P-Channel Power MOSFET BTS50080-1TEA | Classic PROFET™ 12V | automotive smart high-side switch BTS7004-1EPP | PROFET™ +2 12V | automotive smart high-side switch BSP171P | Small signal/small power MOSFET SAK-TC397XA-256F300S BD | AURIX™ Family – TC39xXA (ADAS) S25FS512SDSBHM213 | Quad SPI Flash 1 2 3 4
  • Automotive MOSFET - IPD50P04P4-13 - Infineon Technologies AG
    Infineon Technologies AG
  • Electronic Surplus - IPD50P04P4-13 - 1186149-IPD50P04P4-13 - Win Source Electronics
    Win Source Electronics
  • MOSFETs - 8269109 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 8269109P - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1655949 - RS Components, Ltd.
    RS Components, Ltd.
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Description
Summary of Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested Benefits No charge pump required for high side drive. Simple interface drive circuit World's lowest RDSon at 40V Highest current capability Lowest switching and conduction power losses for highest thermal efficiency Robust packages with superior quality and reliability Standard packages TO-252, TO-263, TO-220, TO-262 Potential Applications High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors) Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump Simulation/SPICE-Mod el Applications Automotive 48 V battery management system (BMS) Automotive high-voltage battery management system (BMS) Domain controller for ADAS and autonomous driving Light electric vehicles (LEV) Designers who used this product also designed with BTS3110N | Classic HITFET™ 12V | automotive smart low-side switches BTS3080EJ | HITFET™ + 12V | automotive low-side switch BSC060P03NS3E G | P-Channel Power MOSFET BTS50080-1TEA | Classic PROFET™ 12V | automotive smart high-side switch BTS7004-1EPP | PROFET™ +2 12V | automotive smart high-side switch BSP171P | Small signal/small power MOSFET SAK-TC397XA-256F300S BD | AURIX™ Family – TC39xXA (ADAS) S25FS512SDSBHM213 | Quad SPI Flash BSP452 | Classic PROFET™ 12V | automotive smart high-side switch TLE9250VLE | Automotive CAN transceivers 1EDI3021AS | Gate driver ICs IRFB4115 | N-Channel Power MOSFET BSC014N04LS | N-Channel Power MOSFET BTS3110N | Classic HITFET™ 12V | automotive smart low-side switches BTS3080EJ | HITFET™ + 12V | automotive low-side switch BSC060P03NS3E G | P-Channel Power MOSFET BTS50080-1TEA | Classic PROFET™ 12V | automotive smart high-side switch BTS7004-1EPP | PROFET™ +2 12V | automotive smart high-side switch BSP171P | Small signal/small power MOSFET SAK-TC397XA-256F300S BD | AURIX™ Family – TC39xXA (ADAS) S25FS512SDSBHM213 | Quad SPI Flash 1 2 3 4
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Datasheet
Datasheet Summary
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The IPD50P04P4-13 is a P-channel enhancement mode MOSFET designed for automotive applications, featuring a maximum drain-source voltage of -40 V, a continuous drain current of -50 A, and a drain-source on-state resistance of up to 12.6 mΩ. It is packaged in a PG-TO252-3-313 case with an operating temperature range of -55 °C to +175 °C, and is AEC-Q200 qualified, RoHS compliant, and 100% avalanche tested. The device supports a peak reflow temperature of 260 °C and has a thermal resistance from junction to case of 2.6 K/W.

Datasheet Summary
Powered by GS/AI

The IPD50P04P4-13 is a P-channel enhancement mode MOSFET designed for automotive applications, featuring a maximum drain-source voltage of -40 V, a continuous drain current of -50 A, and a drain-source on-state resistance of up to 12.6 mΩ. It is packaged in a PG-TO252-3-313 case with an operating temperature range of -55 °C to +175 °C, and is AEC-Q200 qualified, RoHS compliant, and 100% avalanche tested. The device supports a peak reflow temperature of 260 °C and has a thermal resistance from junction to case of 2.6 K/W.

Suppliers

Company
Product
Description
Supplier Links
Automotive MOSFET - IPD50P04P4-13 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Automotive MOSFET
IPD50P04P4-13
Automotive MOSFET IPD50P04P4-13
Summary of Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested Benefits No charge pump required for high side drive. Simple interface drive circuit World's lowest RDSon at 40V Highest current capability Lowest switching and conduction power losses for highest thermal efficiency Robust packages with superior quality and reliability Standard packages TO-252, TO-263, TO-220, TO-262 Potential Applications High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors) Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump Simulation/SPICE-Mod el Applications Automotive 48 V battery management system (BMS) Automotive high-voltage battery management system (BMS) Domain controller for ADAS and autonomous driving Light electric vehicles (LEV) Designers who used this product also designed with BTS3110N | Classic HITFET™ 12V | automotive smart low-side switches BTS3080EJ | HITFET™ + 12V | automotive low-side switch BSC060P03NS3E G | P-Channel Power MOSFET BTS50080-1TEA | Classic PROFET™ 12V | automotive smart high-side switch BTS7004-1EPP | PROFET™ +2 12V | automotive smart high-side switch BSP171P | Small signal/small power MOSFET SAK-TC397XA-256F300S BD | AURIX™ Family – TC39xXA (ADAS) S25FS512SDSBHM213 | Quad SPI Flash BSP452 | Classic PROFET™ 12V | automotive smart high-side switch TLE9250VLE | Automotive CAN transceivers 1EDI3021AS | Gate driver ICs IRFB4115 | N-Channel Power MOSFET BSC014N04LS | N-Channel Power MOSFET BTS3110N | Classic HITFET™ 12V | automotive smart low-side switches BTS3080EJ | HITFET™ + 12V | automotive low-side switch BSC060P03NS3E G | P-Channel Power MOSFET BTS50080-1TEA | Classic PROFET™ 12V | automotive smart high-side switch BTS7004-1EPP | PROFET™ +2 12V | automotive smart high-side switch BSP171P | Small signal/small power MOSFET SAK-TC397XA-256F300S BD | AURIX™ Family – TC39xXA (ADAS) S25FS512SDSBHM213 | Quad SPI Flash 1 2 3 4

Summary of Features

  • P-channel - Normal Level - Enhancement mode
  • AEC qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (RoHS compliant)
  • 100% Avalanche tested

Benefits

  • No charge pump required for high side drive.
  • Simple interface drive circuit
  • World's lowest RDSon at 40V
  • Highest current capability
  • Lowest switching and conduction power losses for highest thermal efficiency
  • Robust packages with superior quality and reliability
  • Standard packages TO-252, TO-263, TO-220, TO-262

Potential Applications

  • High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)
  • Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump

Simulation/SPICE-Model


Applications

  • Automotive 48 V battery management system (BMS)
  • Automotive high-voltage battery management system (BMS)
  • Domain controller for ADAS and autonomous driving
  • Light electric vehicles (LEV)

Designers who used this product also designed with


  • BTS3110N |
    Classic HITFET™ 12V | automotive smart low-side switches
  • BTS3080EJ |
    HITFET™ + 12V | automotive low-side switch
  • BSC060P03NS3E G |
    P-Channel Power MOSFET
  • BTS50080-1TEA |
    Classic PROFET™ 12V | automotive smart high-side switch
  • BTS7004-1EPP |
    PROFET™ +2 12V | automotive smart high-side switch
  • BSP171P |
    Small signal/small power MOSFET
  • SAK-TC397XA-256F300S BD |
    AURIX™ Family – TC39xXA (ADAS)
  • S25FS512SDSBHM213 |
    Quad SPI Flash
  • BSP452 |
    Classic PROFET™ 12V | automotive smart high-side switch
  • TLE9250VLE |
    Automotive CAN transceivers
  • 1EDI3021AS |
    Gate driver ICs
  • IRFB4115 |
    N-Channel Power MOSFET
  • BSC014N04LS |
    N-Channel Power MOSFET
  • BTS3110N |
    Classic HITFET™ 12V | automotive smart low-side switches
  • BTS3080EJ |
    HITFET™ + 12V | automotive low-side switch
  • BSC060P03NS3E G |
    P-Channel Power MOSFET
  • BTS50080-1TEA |
    Classic PROFET™ 12V | automotive smart high-side switch
  • BTS7004-1EPP |
    PROFET™ +2 12V | automotive smart high-side switch
  • BSP171P |
    Small signal/small power MOSFET
  • SAK-TC397XA-256F300S BD |
    AURIX™ Family – TC39xXA (ADAS)
  • S25FS512SDSBHM213 |
    Quad SPI Flash

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Supplier's Site Datasheet
Electronic Surplus - IPD50P04P4-13 - 1186149-IPD50P04P4-13 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - IPD50P04P4-13
1186149-IPD50P04P4-13
Electronic Surplus - IPD50P04P4-13 1186149-IPD50P04P4-13
Manufacturer: Infineon Technologies Win Source Part Number: 1186149-IPD50P04P4-1 3 Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1186149-IPD50P04P4-13
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Infineon Technologies AG Win Source Electronics RS Components, Ltd. RS Components, Ltd.
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPD50P04P4-13 1186149-IPD50P04P4-13 8269109 8269109P
Product Name Automotive MOSFET Electronic Surplus - IPD50P04P4-13 MOSFETs MOSFETs
Polarity P-Channel; P P-Channel
Transistor Technology / Material Si/SiC
VGS(off) -4 to -2 volts
rDS(on) 0.0126 ohms
TJ -55 to 175 C (-67 to 347 F)
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