Infineon Technologies AG 500V MOSFET Transistor IPD50R800CE

IPD50R800 - 500V COOLMOS N-CHANN Product overview: IPD50R800CE from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPD50R800CE can be used for catalog matching and distributor lookup.

Win Source Part Number: 1378628-IPD50R800CE
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 31 pct.
Mfr: Infineon Technologies
Series: CoolMOS™ CE
Package: Bulk
Product Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-344
Base Product Number: IPD50
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Power Dissipation (Max): 60W (Tc)
Mounting Type: Surface Mount
HTSUS: 8542.39.0001