MOSFET N-CH 40V 100A 8TDSON-34 Product overview: IPC100N04S52R8ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPC100N04S52R8AT
N-Channel 40V 100A (Tc) 75W (Tc) Surface Mount PG-TDSON-8-34
N-Channel 40V 100A (Tc) 75W (Tc) Surface Mount PG-TDSON-8-34
N-Channel 40V 100A (Tc) 75W (Tc) Surface Mount PG-TDSON-8-34
Win Source Part Number: 1065234-IPC100N04S52
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Power Dissipation (Max): 75W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8-34
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IPC100N04S52R8ATMA1I
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPC100N04S52R8ATMA1-
Base Product Number: IPC100
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
MOSFET N-CH 40V 100A 8TDSON-34
MOSFET N-CH 40V 100A 8TDSON-34
MOSFET, AEC-Q101, N-CH, 40V, 100A, TDSON ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPC100N04S52R8ATMA1 | IPC100N04S52R8ATMA1TR-ND | 1065234-IPC100N04S52R8ATMA1 | IPC100N04S52R8ATMA1 | IPC100N04S52R8ATMA1 | 93AC7109 | IPC100N04S52R8ATMA1 |
| Product Name | 40V 100A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 40V, 100A, Tdson Rohs Compliant Infineon | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 40 volts | 40 volts | |||||
| PD | 75 milliwatts | 75000 milliwatts | 75000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
