Infineon Technologies AG Single FETs, MOSFETs IPD50R399CP

MOSFET N-CH 500V 9A TO252-3

MOSFET N-CH 500V 9A TO252-3 Product overview: IPD50R399CP from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 9A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 9A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD50R399CP can be used for catalog matching and distributor lookup.

N-Channel 550V 9A (Tc) 83W (Tc) Surface Mount PG-TO252-3-11

Manufacturer: Infineon Technologies
Win Source Part Number: 1186154-IPD50R399CP
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: IPD50R399CP
Categories: Discrete Semiconductor Products
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.infineon.com
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 83W
Alternative Parts (Cross-Reference): STD12NM50ND; SiHD12N50E-GE3; STD11NM50N; STD11N50M2; STD12N50M2; MMD50R380PRH; IPD50R399CPXT; IPD50R399CP;
Introduction Date: October 30, 2006
ECCN: EAR99
Country of Origin: China, Malaysia, Philippines
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 550V
Id - Continuous Drain Current: 9A
Rds On (Maximum) at Id, Vgs: 399mOhm at 4.9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.5V at 330μA
Gate Charge (Qg) (Maximum) at Vgs: 23nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 890pF at 100V