Infineon Technologies AG Electronic Surplus - IPD50R399CP IPD50R399CP

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1186154-IPD50R399CP Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Family Name: IPD50R399CP Categories: Discrete Semiconductor Products Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.infineon.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 83W Alternative Parts (Cross-Reference): STD12NM50ND; SiHD12N50E-GE3; STD11NM50N; STD11N50M2; STD12N50M2; MMD50R380PRH; IPD50R399CPXT; IPD50R399CP; Introduction Date: October 30, 2006 ECCN: EAR99 Country of Origin: China, Malaysia, Philippines Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 550V Id - Continuous Drain Current: 9A Rds On (Maximum) at Id, Vgs: 399mOhm at 4.9A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 330μA Gate Charge (Qg) (Maximum) at Vgs: 23nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 890pF at 100V
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1186154-IPD50R399CP Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Family Name: IPD50R399CP Categories: Discrete Semiconductor Products Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.infineon.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 83W Alternative Parts (Cross-Reference): STD12NM50ND; SiHD12N50E-GE3; STD11NM50N; STD11N50M2; STD12N50M2; MMD50R380PRH; IPD50R399CPXT; IPD50R399CP; Introduction Date: October 30, 2006 ECCN: EAR99 Country of Origin: China, Malaysia, Philippines Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 550V Id - Continuous Drain Current: 9A Rds On (Maximum) at Id, Vgs: 399mOhm at 4.9A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 330μA Gate Charge (Qg) (Maximum) at Vgs: 23nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 890pF at 100V
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Suppliers

Company
Product
Description
Supplier Links
Electronic Surplus - IPD50R399CP - 1186154-IPD50R399CP - Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - IPD50R399CP
1186154-IPD50R399CP
Electronic Surplus - IPD50R399CP 1186154-IPD50R399CP
Manufacturer: Infineon Technologies Win Source Part Number: 1186154-IPD50R399CP Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Family Name: IPD50R399CP Categories: Discrete Semiconductor Products Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.infineon.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 83W Alternative Parts (Cross-Reference): STD12NM50ND; SiHD12N50E-GE3; STD11NM50N; STD11N50M2; STD12N50M2; MMD50R380PRH; IPD50R399CPXT; IPD50R399CP; Introduction Date: October 30, 2006 ECCN: EAR99 Country of Origin: China, Malaysia, Philippines Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 550V Id - Continuous Drain Current: 9A Rds On (Maximum) at Id, Vgs: 399mOhm at 4.9A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 330μA Gate Charge (Qg) (Maximum) at Vgs: 23nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 890pF at 100V

Manufacturer: Infineon Technologies
Win Source Part Number: 1186154-IPD50R399CP
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: IPD50R399CP
Categories: Discrete Semiconductor Products
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.infineon.com
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 83W
Alternative Parts (Cross-Reference): STD12NM50ND; SiHD12N50E-GE3; STD11NM50N; STD11N50M2; STD12N50M2; MMD50R380PRH; IPD50R399CPXT; IPD50R399CP;
Introduction Date: October 30, 2006
ECCN: EAR99
Country of Origin: China, Malaysia, Philippines
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 550V
Id - Continuous Drain Current: 9A
Rds On (Maximum) at Id, Vgs: 399mOhm at 4.9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.5V at 330μA
Gate Charge (Qg) (Maximum) at Vgs: 23nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 890pF at 100V

Buy Now Datasheet
Singapore
500V 9A TO252 MOSFET Transistor
278-IPD50R399CP
500V 9A TO252 MOSFET Transistor 278-IPD50R399CP
MOSFET N-CH 500V 9A TO252-3 Product overview: IPD50R399CP from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 9A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 9A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD50R399CP can be used for catalog matching and distributor lookup.

MOSFET N-CH 500V 9A TO252-3 Product overview: IPD50R399CP from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 9A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 9A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD50R399CP can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPD50R399CP - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPD50R399CP
Single FETs, MOSFETs IPD50R399CP
MOSFET N-CH 500V 9A TO252-3

MOSFET N-CH 500V 9A TO252-3

Supplier's Site
Single FETs, MOSFETs - IPD50R399CP-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD50R399CP-ND
Single FETs, MOSFETs IPD50R399CP-ND
N-Channel 550V 9A (Tc) 83W (Tc) Surface Mount PG-TO252-3-11

N-Channel 550V 9A (Tc) 83W (Tc) Surface Mount PG-TO252-3-11

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD50R399CP - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD50R399CP
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD50R399CP
MOSFET N-CH 500V 9A TO252-3

MOSFET N-CH 500V 9A TO252-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1186154-IPD50R399CP 278-IPD50R399CP IPD50R399CP IPD50R399CP-ND IPD50R399CP
Product Name Electronic Surplus - IPD50R399CP 500V 9A TO252 MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type SOT3; TO-252 (DPAK) Tape & Reel (TR) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
Packing Method Tape Reel; Tape and Reel Tape & Reel (TR) Tape Reel; Tape & Reel (TR)
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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