The IPD50N04S4-10 is an N-channel enhancement mode MOSFET designed for automotive applications, housed in a PG-TO252-3-313 package. It has a drain-source voltage rating of 40 V, a continuous drain current of 50 A at 25°C, and a maximum on-state resistance of 9.3 mΩ at 10 V gate-source voltage. The device operates at junction temperatures up to 175°C, supports 100% avalanche testing, and is AEC-Q200 qualified with RoHS compliance. It is rated for a single-pulse avalanche energy of 42 mJ at 25 A drain current. Thermal resistance from junction to case is 3.7 K/W, and junction-to-ambient thermal resistance is 62 K/W on a minimal footprint PCB.
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Manufacturer: Infineon Technologies
Win Source Part Number: 205226-IPD50N04S4-10
Category: Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: OptiMOS?
Packaging: Reel(TR)
Mounting Style: SMD/SMT
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Device Package: PG-TO252-3-313
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 15μA
Gate Charge (Qg) @ Vgs: 18.2nC @ 10V
Input Capacitance (Ciss) @ Vds: 1430pF @ 25V
Power - Max: 41W
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
MOSFETs N-Ch 40V 50A DPAK-2 OptiMOS-T2 Product overview: IPD50N04S4-10 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 50A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 50A, DPAK, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPD50N04S4-10 can be used for catalog matching and distributor lookup.
MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
| Infineon Technologies AG | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD50N04S4-10 | 205226-IPD50N04S4-10 | 2088-IPD50N04S4-10 | IPD50N04S4-10 | IPD50N04S4-10 |
| Product Name | Automotive MOSFET | Discrete Semiconductor Products | 40V 50A DPAK MOSFET Transistor | Transistors | MOSFET |
| Polarity | N-Channel; N | N-Channel | N-Channel | ||
| Transistor Technology / Material | Si/SiC | ||||
| VGS(off) | 2 to 4 volts | ||||
| rDS(on) | 0.0093 ohms | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
