N-channel MOSFET designed for switching applications in a DPAK-2 package measuring 6.7 mm by 10.16 mm with a vertical mount style. The device has a drain-source breakdown voltage of 60 V, a continuous drain current of 90 A at 25 °C, and a maximum junction temperature of 175 °C. It features a gate-source threshold voltage range of 2 V to 4 V, a typical on-resistance of 3.8 mΩ at 10 V gate-source voltage, and a total gate charge of 48 nC. The device is RoHS compliant and qualified for automotive applications according to AEC-Q101.
MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD038N06N3 G |
| Product Name | MOSFET |
