MOSFET N-CH 60V 18A/45A TO252-3 Product overview: IPD053N06NATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 18A, 45A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 18A, 45A, TO252, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD053N06NATMA1 can be used for catalog matching and distributor lookup.
N-Channel 60V 18A (Ta), 45A (Tc) 3W (Ta), 83W (Tc) Surface Mount PG-TO252-3
N-Channel 60V 18A (Ta), 45A (Tc) 3W (Ta), 83W (Tc) Surface Mount PG-TO252-3
N-Channel 60V 18A (Ta), 45A (Tc) 3W (Ta), 83W (Tc) Surface Mount PG-TO252-3
Manufacturer: Infineon Technologies
Win Source Part Number: 776857-IPD053N06NATM
Series: OptiMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc)
Family Name: IPD053N06N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Package: PG-TO252-3
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2.8V @ 36μA
Gate Charge (Qg) (Maximum) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2000pF @ 30V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 3W (Ta), 83W (Tc)
Rds On (Maximum) @ Id, Vgs: 5.3 mOhm @ 45A, 10V
Alternative Parts (Cross-Reference): STD80N6F6; TK80S06K3L(T6L1,NQ; NVD5862NT4G; TK80S06K3L;
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
MOSFET N-CH 60V 18A/45A TO252-3
MOSFET Transistor, N Channel, 45 A, 60 V, 0.0045 ohm, 10 V, 2.8 V RoHS Compliant: Yes
Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) TO-252 T/R
MOSFET N-CH 60V 18A/45A TO252-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPD053N06NATMA1 | IPD053N06NATMA1CT-ND | 776857-IPD053N06NATMA1 | IPD053N06NATMA1 | 50Y2021 | 376-IPD053N06NATMA1 | IPD053N06NATMA1 | IPD053N06NATMA1 |
| Product Name | 60V 18A 45A TO252 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD053N06NATMA1 | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 45 A, 60 V, 0.0045 Ohm, 10 V, 2.8 V Rohs Compliant Infineon | Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) TO-252 T/R | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| Transconductance | 0.0380 kS | |||||||
| PD | 83 milliwatts | 3000 to 83000 milliwatts | 3000 milliwatts | 3000 milliwatts |
