Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD320N20N3G IPD320N20N3G

Manufacturer: Infineon Technologies Win Source Part Number: 088914-IPD320N20N3G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 136W (Tc) Family Name: IPD320N20N3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 34A (Tc) Gate-Source Threshold Voltage: 4V @ 90μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 2350pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 32 mOhm @ 34A, 10V Alternative Parts (Cross-Reference): EPC2010; EPC1010; IPD320N20N3GXT; Introduction Date: October 22, 2009 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2024 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance