Infineon Technologies AG 200V 34A MOSFET Transistor IPD320N20N3G

MOSFET N-CH 200V 34A Product overview: IPD320N20N3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 34A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 34A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPD320N20N3G can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 088914-IPD320N20N3G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 136W (Tc)
Family Name: IPD320N20N3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 34A (Tc)
Gate-Source Threshold Voltage: 4V @ 90μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 2350pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 32 mOhm @ 34A, 10V
Alternative Parts (Cross-Reference): EPC2010; EPC1010; IPD320N20N3GXT;
Introduction Date: October 22, 2009
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2024
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance