Infineon Technologies AG 500V 7.1A TO252 MOSFET Transistor IPD50R520CP

MOSFET N-CH 500V 7.1A TO252-3 Product overview: IPD50R520CP from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 7.1A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 7.1A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD50R520CP can be used for catalog matching and distributor lookup.

N-Channel 550V 7.1A (Tc) 66W (Tc) Surface Mount PG-TO252-3-11

Manufacturer: Infineon Technologies
Win Source Part Number: 1186157-IPD50R520CP
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.infineon.com
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 66W
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 550V
Id - Continuous Drain Current: 7.1A
Rds On (Maximum) at Id, Vgs: 520mOhm at 3.8A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 17nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 680pF at 100V