IPD50N08S4-13 is an N-channel enhancement mode MOSFET designed for automotive applications, featuring an 80 V drain-source breakdown voltage, 50 A continuous drain current, and a maximum on-state resistance of 13.2 mΩ at 10 V gate-source voltage. It is packaged in a PG-TO252-3-313 surface-mount case with an operating temperature range of -55 °C to +175 °C. The device is AEC-Q101 qualified, RoHS compliant, 100% avalanche tested, and supports MSL1 reflow conditions up to 260 °C. Thermal resistance from junction to case is 2.1 K/W. Avalanche energy is rated at 76 mJ, with a single-pulse avalanche current of 31 A. Gate-source voltage is limited to ±20 V.
Summary of Features
Simulation/SPICE-Mod
Applications
Designers who used this product also designed with
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| Infineon Technologies AG | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD50N08S4-13 | IPD50N08S4-13 |
| Product Name | Automotive MOSFET | MOSFET |
| Polarity | N-Channel; N | |
| Transistor Technology / Material | Si/SiC | |
| VGS(off) | 2 to 4 volts | |
| rDS(on) | 0.0132 ohms |
