Win Source Part Number: 979796-IPD50R500CEAU
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 550 V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 57W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPD50R500CEAUMA1CT,I
Base Product Number: IPD50R500
Drive Voltage (Max Rds On, Min Rds On): 13V
N-Channel 550V 7.6A (Tc) 57W (Tc) Surface Mount PG-TO252-3
N-Channel 550V 7.6A (Tc) 57W (Tc) Surface Mount PG-TO252-3
N-Channel 550V 7.6A (Tc) 57W (Tc) Surface Mount PG-TO252-3
MOSFET N-CH 500V 7.6A TO252 Product overview: IPD50R500CEAUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 7.6A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 7.6A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD50R500CEAUMA1
MOSFET N-CH 500V 7.6A TO252
MOSFET, N-CH, 7.6A, 500V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.45ohm; Rds(on) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 500V 7.6A TO252
| Win Source Electronics | RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 979796-IPD50R500CEAUMA1 | 2183049 | IPD50R500CEAUMA1CT-ND | 278-IPD50R500CEAUMA1 | IPD50R500CEAUMA1 | 22AC8283 | IPD50R500CEAUMA1 | IPD50R500CEAUMA1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | Single FETs, MOSFETs | 500V 7.6A TO252 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 7.6A, 500V, To-252; Transistor Polarity Infineon | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| PD | 57000 milliwatts | 57 milliwatts | 57000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3 | TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Surface Mount | TO-3; TO-252 (DPAK) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| MOSFET Operating Mode | Enhancement |
