Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD135N08N3G IPD135N08N3G

Manufacturer: Infineon Technologies
Win Source Part Number: 068992-IPD135N08N3G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 79W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 45A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 33μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 1730pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13.5 mOhm @ 45A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

MOSFET N-CH 80V 45A Product overview: IPD135N08N3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 45A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 45A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPD135N08N3G can be used for catalog matching and distributor lookup.