MOSFET N-CH 55V 50A TO252-31 Product overview: IPD50N06S2L13ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 50A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 50A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD50N06S2L13ATM
N-Channel 55V 50A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11
N-Channel 55V 50A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11
N-Channel 55V 50A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11
Infineon MOSFET IPD50N06S2L13ATMA2
Infineon MOSFET IPD50N06S2L13ATMA2
Infineon MOSFET IPD50N06S2L13ATMA2
Win Source Part Number: 965355-IPD50N06S2L13
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 34A, 10V
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 136W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-11
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): DMT6009LK3-13; DMTH6009LK3-13; NTDV5805NT4G; IRFR48ZPBF; AUIRFR2905Z; AUIRLR2905ZIPD50N06S
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001063626,IPD50N06
Base Product Number: IPD50N06
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 55V 50A TO252-3
MOSFET N-CH 55V 50A TO252-31
MOSFET N-CH 55V 50A TO252-31
MOSFET, N-CH, 55V, 175DEG C, 136W ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPD50N06S2L13ATMA2 | 448-IPD50N06S2L13ATMA2CT-ND | 2144377 | 2144377P | 965355-IPD50N06S2L13ATMA2 | 376-IPD50N06S2L13ATMA2 | IPD50N06S2L13ATMA2 | IPD50N06S2L13ATMA2 | IPD50N06S2L13ATMA2 | 39AH8906 |
| Product Name | 55V 50A TO252 MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET N-CH 55V 50A TO252-3 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 55V, 175Deg C, 136W Rohs Compliant Infineon |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||||
| V(BR)DSS | 55 volts | 55 volts | ||||||||
| PD | 136 milliwatts | 136000 milliwatts | 136000 milliwatts | 136000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
