The IPD15N06S2L-64 is an N-channel logic-level enhancement mode MOSFET designed for automotive applications. It is packaged in a PG-TO252-3-11 case with a maximum drain-source voltage of 55 V, continuous drain current of 19 A at 25°C, and on-state resistance of 64 mΩ at 10 V gate-source voltage. The device operates up to 175°C, is AEC-Q101 qualified, and features a green, lead-free package. It is 100% avalanche tested and rated for MSL1 reflow up to 260°C. Thermal resistance from junction to case is 3.2 K/W, and junction-to-ambient is 75 K/W on a minimal footprint PCB. The gate threshold voltage ranges from 1.2 V to 2.0 V, and the gate charge totals up to 13 nC.
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Manufacturer: Infineon Technologies
Win Source Part Number: 1186114-IPD15N06S2L-
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
| Infineon Technologies AG | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPD15N06S2L-64 | 1186114-IPD15N06S2L-64 |
| Product Name | Automotive MOSFET | Electronic Surplus - IPD15N06S2L-64 |
| Polarity | N-Channel; N | |
| Transistor Technology / Material | Si/SiC | |
| VGS(off) | 1.2 to 2 volts | |
| rDS(on) | 0.0640 ohms |