Manufacturer: Infineon Technologies
Win Source Part Number: 874752-IPB80P04P407A
Series: Automotive, AEC-Q101, OptiMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: P-Channel 40 V 80A (Tc) 88W (Tc) Surface Mount PG-TO263-3-2
Package: Reel - TR
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: Surface Mount
Part Status: Not For New Designs
Family Name: IPB80P04
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-3-2
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET P-Ch 80A 40V OptiMOS-P2 TO263
MOSFET P-Ch 80A 40V OptiMOS-P2 TO263
MOSFET P-Ch 80A 40V OptiMOS-P2 TO263
MOSFET P-CH 40V 80A TO263-3 Product overview: IPB80P04P407ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB80P04P407ATMA
P-Channel 40V 80A (Tc) 88W (Tc) Surface Mount PG-TO263-3-2
MOSFET P-CH 40V 80A TO263-3
MOSFET P-CH 40V 80A TO263-3
MOSFET P-Ch -40V -80A D2PAK-2
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 874752-IPB80P04P407ATMA1 | 8269487 | 8269487P | 278-IPB80P04P407ATMA1 | 448-IPB80P04P407ATMA1TR-ND | IPB80P04P407ATMA1 | IPB80P04P407ATMA1 | IPB80P04P407ATMA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80P04P407ATMA1 | MOSFETs | MOSFETs | 40V 80A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | TO-263; SOT3; PG-TO263-3-2 | TO-263; D2pak (to-263) | TO-263; TO-263 | Tape & Reel (TR) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||
| Number of units in IC | 1 |
