The IPD22N08S2L-50 is an N-channel logic-level enhancement mode MOSFET for automotive applications, packaged in a PG-TO252-3-11 case with a maximum junction temperature of 175°C. It has a drain-source breakdown voltage of 75 V, a maximum continuous drain current of 27 A at 25°C, and a drain-source on-state resistance of 50 mΩ maximum at V_GS = 10 V and I_D = 50 A. The device is AEC-Q101 qualified, MSL1 rated for up to 260°C peak reflow, and 100% avalanche tested. Thermal resistance from junction to case is 2 K/W, and power dissipation is 75 W at 25°C. The package is green (lead-free), and the device supports a gate-source voltage of ±20 V.
Summary of Features
Benefits
Potential Applications
Simulation/SPICE-Mod
Applications
Designers who used this product also designed with
Manufacturer: Infineon Technologies
Win Source Part Number: 1186116-IPD22N08S2L-
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
MOSFETs N-Ch 75V 22A DPAK-2 OptiMOS Product overview: IPD22N08S2L-50 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 22A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 22A, DPAK, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPD22N08S2L-50 can be used for catalog matching and distributor lookup.
MOSFET N-Ch 75V 22A DPAK-2 OptiMOS
| Infineon Technologies AG | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPD22N08S2L-50 | 1186116-IPD22N08S2L-50 | 2088-IPD22N08S2L-50 | IPD22N08S2L-50 |
| Product Name | Automotive MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD22N08S2L-50 | 75V 22A DPAK MOSFET Transistor | MOSFET |
| Polarity | N-Channel; N | N-Channel | ||
| Transistor Technology / Material | Si/SiC | |||
| VGS(off) | 1.2 to 2 volts | |||
| rDS(on) | 0.0500 ohms | |||
| TJ | -55 to 175 C (-67 to 347 F) |
